參數(shù)資料
型號: MBM30LV0064-PFTN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 64M (8M X 8) BIT NAND-type
中文描述: 8M X 8 FLASH 3.3V PROM, 7000 ns, PDSO40
封裝: 0.80 MM PITCH, PLASTIC, TSOP2-44/40
文件頁數(shù): 2/43頁
文件大?。?/td> 397K
代理商: MBM30LV0064-PFTN
MBM30LV0064
2
I
FEATURES
3.3 V-only operating voltage (2.7 V to 3.6 V)
Minimizes system level power requirements
Organization
Memory Cell Array : (8M + 256K)
×
8 bit
Data Register
: (512 + 16)
×
8 bit
Automatic Program and Erase
Page Program: (512 + 16) Byte
Block Erase
: (8K + 256) Byte
528 Byte Page Read Operation
Random Access : 7
μ
s (Max.)
Serial Access
: 35 ns (Max.)
Fast Program and Erase
Program Time
: 200
μ
s (Typ.) / page
Block Erase Time : 2 ms (Typ.) / block
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
1,000,000 write/erase cycle guaranteed (ECC system required)
Command Register Operation
Package
44(40)-pin TSOP Type II (0.8 mm pitch)
Normal/Reverse Type
Data Retention: 10 years
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