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參數(shù)資料
| 型號(hào)： | M69AW024BL60ZB8T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| 中文描述： | 16兆位（1米× 16）3V的異步移動(dòng)存儲(chǔ)芯片 |
| 文件頁(yè)數(shù)： | 23/29頁(yè) |
| 文件大小： | 429K |
| 代理商： | M69AW024BL60ZB8T |
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M69AW024B
Table 9. Power Down and Power-Up AC Parameters
Note: 1. Some data may be written to any address location if t
EHWH
is less than the minimum required time.
2. The device has to enter and exit Power Down mode after t
CHCL
.
3. The Input Transition Time used in AC measurements is 5ns.
Figure 18. Standby Mode Entry AC Waveforms, After Read or Write
Note: Both t
EHGH
and t
EHWH
define the earliest entry timing for Stand-by mode. If either of timing is not satisfied, it takes the t
AVAX
(min) period
from either the last address transition of A0, A1 and A2, or E1 rising edge.
Symbol
Alt.
Parameter
M69AW024B
Unit
–60
–70
Min
Max
Min
Max
t
CLEL
t
CSP
E2 Low Setup Time for Power Down Entry
10
10
ns
t
ELCH
t
C2LP
E2 Low Hold Time after Power Down Entry
80
90
ns
t
CHEL
t
CHH
E1 High Hold Time following E2 High after Power-
Down Exit (Sleep Mode only)
350
350
μs
t
EHEL
t
CHHP
E1 High Hold Time following E2 High after Power-
Down Exit (not in Sleep Mode)
400
400
μs
t
EHCH1
t
CHS
E1 High Setup Time following E2 High after Power-
Down Exit
10
10
ns
t
EHCH2
t
C2LH
Power-up Time 1
50
50
μs
t
CHCL12
t
CHCL22
t
C2HL
Power-up Time 2
50
50
μs
t
EHGH
t
CHOX
E1 High to G Invalid Time for Standby Entry
10
10
ns
t
EHWH
t
CHWX
E1 High to W Invalid Time for Standby Entry
10
10
ns
t
T
t
T
Input Transition Time
1
25
1
25
ns
AI07741
E1
G
W
tEHGH
tEHWH
Active (Write)
Standby
Active (Read)
Standby
E1
G
W
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| M69AW024B | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M69AW024BL70ZB8T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1M x16) 3V Asynchronous PSRAM |
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| M69AW048BL70ZB8 | 制造商:STMicroelectronics 功能描述: |
| M69AW048BL70ZB8T | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 32 MBIT (2M X16) 3V Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| M69KB096AA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM |
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