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參數(shù)資料
| 型號(hào)： | M68AW256MN55ND6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| 中文描述： | 4兆位（256K × 16）3.0V異步SRAM |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 161K |
| 代理商： | M68AW256MN55ND6T |
M68AW256M
6/20
Figure 5. Block Diagram
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 2. Absolute Maximum Ratings
Note: 1. One output at a time, not to exceed 1 second duration.
2. Up to a maximum operating V
CC
of 3.6V only.
AI04833
ROW
DECODER
A7
A17
(8)
DQ0
DQ15
(8)
COLUMN
DECODER
I/O CIRCUITS
A0
A6
E
W
G
MEMORY
ARRAY
VCC
VSS
LB
UB
(8)
(8)
UB
LB
UB
LB
Symbol
Parameter
Value
Unit
I
O(1)
Output Current
20
mA
T
A
Ambient Operating Temperature
–55 to 125
°C
T
STG
Storage Temperature
–65 to 150
°C
V
CC
Supply Voltage
–0.5 to 4.6
V
V
IO (2)
Input or Output Voltage
–0.5 to V
CC
+0.5
V
P
D
Power Dissipation
1
W
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| M68AW256MN55ZB1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
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| M68AW256MN55ZB1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN55ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
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