參數(shù)資料
型號: M59DR016DZB
廠商: 意法半導體
英文描述: 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
中文描述: 16兆1兆x16插槽,雙行,頁1.8V電源閃存
文件頁數(shù): 34/37頁
文件大小: 240K
代理商: M59DR016DZB
M59DR016C, M59DR016D
34/37
Table 31. Revision History
Date
Version
Revision Details
March 2001
-01
First Issue
相關PDF資料
PDF描述
M59DR016C100ZB1T 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016C100ZB6T 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016C 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016C120ZB1T 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016C120ZB6T 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
M59DR016EC85ZB6T 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M59DR016-ZBT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR032A 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032A100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032A100N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory