參數(shù)資料
型號: M59DR016D100ZB1T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
中文描述: 16兆1兆x16插槽,雙行,頁1.8V電源閃存
文件頁數(shù): 35/37頁
文件大小: 240K
代理商: M59DR016D100ZB1T
35/37
M59DR016C, M59DR016D
Table 32. TFBGA48 - 8 x 6 balls array, 0.75 mm pitch, Package Mechanical Data
Symbol
millimeters
inches
Typ
Min
Max
Typ
Min
Max
A
1.350
0.0531
A1
0.300
0.200
0.350
0.0118
0.0079
0.0138
A2
1.000
0.0394
b
0.300
0.550
0.0118
0.0217
D
7.000
6.900
7.100
0.2756
0.2717
0.2795
D1
5.250
0.2067
ddd
0.100
0.0039
E
12.000
11.900
12.100
0.4724
0.4685
0.4764
E1
3.750
0.1476
e
0.750
0.0295
SD
0.375
0.0148
SE
0.375
0.0148
FE
4.125
0.1624
FD
0.875
0.0344
Figure 14. TFBGA48 - 8 x 6 balls array, 0.75 mm pitch, Package Outline
Drawing is not to scale.
E1
E
D1
D
A2
A1
A
BGA-Z03
ddd
e
b
SD
SE
BALL "A1"
FD
FE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M59DR016D100ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016D120ZB1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016D120ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016DZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016EC85ZB6T 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel