參數(shù)資料
型號: M59DR016C120ZB6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
中文描述: 16兆1兆x16插槽,雙行,頁1.8V電源閃存
文件頁數(shù): 35/37頁
文件大?。?/td> 240K
代理商: M59DR016C120ZB6T
35/37
M59DR016C, M59DR016D
Table 32. TFBGA48 - 8 x 6 balls array, 0.75 mm pitch, Package Mechanical Data
Symbol
millimeters
inches
Typ
Min
Max
Typ
Min
Max
A
1.350
0.0531
A1
0.300
0.200
0.350
0.0118
0.0079
0.0138
A2
1.000
0.0394
b
0.300
0.550
0.0118
0.0217
D
7.000
6.900
7.100
0.2756
0.2717
0.2795
D1
5.250
0.2067
ddd
0.100
0.0039
E
12.000
11.900
12.100
0.4724
0.4685
0.4764
E1
3.750
0.1476
e
0.750
0.0295
SD
0.375
0.0148
SE
0.375
0.0148
FE
4.125
0.1624
FD
0.875
0.0344
Figure 14. TFBGA48 - 8 x 6 balls array, 0.75 mm pitch, Package Outline
Drawing is not to scale.
E1
E
D1
D
A2
A1
A
BGA-Z03
ddd
e
b
SD
SE
BALL "A1"
FD
FE
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