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參數(shù)資料
| 型號(hào)： | M59DR016C120ZB6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| 中文描述： | 16兆1兆x16插槽，雙行，頁1.8V電源閃存 |
| 文件頁數(shù)： | 20/37頁 |
| 文件大?。?/td> | 240K |
| 代理商： | M59DR016C120ZB6T |
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M59DR016C, M59DR016D
20/37
Table 24. DC Characteristics
(TA = 0 to 70°C or –40 to 85°C; V
DD
= V
DDQ
= 1.65V to 2.2V)
Symbol
Parameter
Note: 1. Sampled only, not 100% tested.
2. V
PP
may be connected to 12V power supply for a total of less than 100 hrs.
3. For standard program/erase operation V
PP
is don’t care.
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DD
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DD
±5
μA
I
CC1
Supply Current
(Read Mode)
E = V
IL
, G = V
IH
, f = 6MHz
10
20
mA
I
CC2
Supply Current
(Power Down)
RP = V
SS
± 0.2V
2
10
μA
I
CC3
Supply Current (Standby)
E = V
DD
± 0.2V
15
50
μA
I
CC4
(1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
10
20
mA
I
CC5 (1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Read in the
other Bank
20
40
mA
I
PP1
V
PP
Supply Current
(Program or Erase)
V
PP
= 12V ± 0.6V
5
10
mA
I
PP2
V
PP
Supply Current
(Standby or Read)
V
PP
≤
V
CC
0.2
5
μA
V
PP
= 12V ± 0.6V
100
400
μA
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DDQ
–0.4
V
DDQ
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
CMOS
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP (2,3)
V
PP
Supply Voltage
(Program or Erase)
–0.4
V
DD
+ 0.4
V
Double Word Program
11.4
12.6
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR016D | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D100ZB1T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D100ZB6T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D120ZB1T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D120ZB6T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR016CZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D120ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
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