- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359084 > M59DR008F120ZB1T (意法半導(dǎo)體) 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M59DR008F120ZB1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 8兆位512KB的x16插槽，雙行，第低壓閃存 |
| 文件頁(yè)數(shù)： | 21/37頁(yè) |
| 文件大?。?/td> | 267K |
| 代理商： | M59DR008F120ZB1T |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)當(dāng)前第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)
21/37
M59DR008E, M59DR008F
Table 25. Read AC Characteristics
(TA = 0 to 70°C or –40 to 85°C; V
DD
= V
DDQ
= 1.65V to 2.2V)
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to t
ELQV
- t
GLQV
after the falling edge of E without increasing t
ELQV
.
Symbol
Alt
Parameter
Test Condition
M59DR008
Unit
100
120
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to Next
Address Valid
E = V
IL
, G = V
IL
100
120
ns
t
AVQV
t
ACC
Address Valid to Output
Valid (Random)
E = V
IL
, G = V
IL
100
120
ns
t
AVQV1
t
PAGE
Address Valid to Output
Valid (Page)
E = V
IL
, G = V
IL
35
45
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output
Transition
G = V
IL
0
0
ns
t
ELQV
t
CE
Chip Enable Low to Output
Valid
G = V
IL
100
120
ns
t
GLQX
(1)
t
OLZ
Output Enable Low to
Output Transition
E = V
IL
0
0
ns
t
GLQV
(2)
t
OE
Output Enable Low to
Output Valid
E = V
IL
25
35
ns
t
EHQX
t
OH
Chip Enable High to Output
Transition
G = V
IL
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output
Hi-Z
G = V
IL
25
35
ns
t
GHQX
t
OH
Output Enable High to
Output Transition
E = V
IL
0
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to
Output Hi-Z
E = V
IL
25
35
ns
t
AXQX
t
OH
Address Transition to
Output Transition
E = V
IL
, G = V
IL
0
0
ns
t
PHQ7V1
RP High to Data Valid
(Read Mode)
150
150
ns
t
PHQ7V2
RP High to Data Valid
(Power Down enabled)
50
50
μs
t
PLQ7V
RP Low to Reset Complete
During Program/Erase
15
μs
t
PLPH
t
RP
RP Pulse Width
100
100
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR008F120ZB6T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008FN | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR016 | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016DZB | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C100ZB1T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR008F120ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008FN | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008FZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR016 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。