- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359084 > M59DR008F120ZB1T (意法半導(dǎo)體) 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M59DR008F120ZB1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 8兆位512KB的x16插槽，雙行，第低壓閃存 |
| 文件頁(yè)數(shù)： | 1/37頁(yè) |
| 文件大?。?/td> | 267K |
| 代理商： | M59DR008F120ZB1T |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)
1/37
PRODUCT PREVIEW
October 1999
This is preliminary information on a new product now in development. Details are subject to change without notice.
M59DR008E
M59DR008F
8 Mbit (512Kb x16, Dual Bank, Page) Low Voltage Flash Memory
I
SUPPLY VOLTAGE
– V
DD
= V
DDQ
= 1.65V to 2.2V: for Program,
Erase and Read
– V
PP
= 12V: optional Supply Voltage for fast
Program and Erase
I
ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 words
– Page Access: 35ns
– Random Access: 100ns
I
PROGRAMMING TIME
– 10μs by Word typical
– Double Word Programming Option
I
MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit - 4 Mbit
– Parameter Blocks (Top or Bottom location)
– Main Blocks
I
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
I
BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power Up
– Any combination of Blocks can be protected
– WP for Block Locking
I
COMMON FLASH INTERFACE (CFI)
I
64 bit SECURITY CODE
I
ERASE SUSPEND and RESUME MODES
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M59DR008E: A2h
– Device Code, M59DR008F: A3h
BGA
TSOP48 (N)
12 x 20mm
FBGA48 (ZB)
8 x 6 solder balls
Figure 1. Logic Diagram
AI03212
19
A0-A18
W
DQ0-DQ15
VDD
M59DR008E
M59DR008F
E
VSS
16
G
RP
WP
VDDQVPP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR008F120ZB6T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008FN | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR016 | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016DZB | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C100ZB1T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR008F120ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008FN | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008FZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR016 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。