參數資料
型號: M59DR008F120N6T
廠商: 意法半導體
英文描述: 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
中文描述: 8兆位512KB的x16插槽,雙行,第低壓閃存
文件頁數: 23/37頁
文件大小: 267K
代理商: M59DR008F120N6T
23/37
M59DR008E, M59DR008F
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相關PDF資料
PDF描述
M59DR008F120ZB1T 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008F120ZB6T 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008FN 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR016 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016DZB 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
相關代理商/技術參數
參數描述
M59DR008F120ZB1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008F120ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008FN 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008FZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR016 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory