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參數(shù)資料
| 型號： | M59BW102N |
| 廠商： | 意法半導體 |
| 英文描述： | 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
| 中文描述： | 1兆位64Kb的x16插槽，突發(fā)低電壓快閃記憶體 |
| 文件頁數(shù)： | 20/24頁 |
| 文件大小： | 181K |
| 代理商： | M59BW102N |
M59BW102
20/24
Figure 15. Data Polling Flowchart
READ DQ5 & DQ7
at VALID ADDRESS
START
READ DQ7
FAIL
PASS
AI01369B
D=
DATA
YES
NO
YES
NO
DQ5
= 1
D=
DATA
YES
NO
Figure 16. Data Toggle Flowchart
READ
DQ2, DQ5 & DQ6
START
READ DQ2, DQ6
FAIL
PASS
AI01873
DQ2=
TOGGLE
NO
NO
YES
YES
DQ5
= 1
NO
YES
DQ2=
TOGGLE
Table 20. Program, Erase Times and Program, Erase Endurance Cycles
(T
A
= 0 to 70°C; V
CC
= 3.0V to 3.6V)
Parameter
M59BW102
Unit
Min
Typ
Typical after
100k W/E Cycles
Chip Erase (Preprogrammed)
0.7
0.7
sec
Chip Erase
1.5
1.5
sec
Chip Program
0.7
0.7
sec
Word Program
10
10
μs
Program/Erase Cycles
100,000
cycles
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相關(guān)代理商/技術(shù)參數(shù) |
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| M59DR008 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
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| M59DR008E100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
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