參數(shù)資料
型號(hào)： M58LV064A150ZA6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
中文描述： 64兆位4Mb的x16或功能的2Mb X32號(hào)，統(tǒng)一座，突發(fā)3V電源閃存
文件頁數(shù)： 64/65頁
文件大?。?/td> 450K
代理商： M58LV064A150ZA6T
M58LV064A, M58LV064B
64/65
REVISION HISTORY
Table 35. Document Revision History
Date
Version
Revision Details
September
1999
-01
First Issue.
June 2000
-02
Corrections.
02-Mar-01
-03
Major rewrite and restructure.
26-Mar-01
-04
Corrections in CFI tables, TBGA80 and TBGA64 Package Mechanical Dimensions
updated.
06-Apr-01
-05
Correction in Asynchronous Bus Write.
15-May-01
-06
120ns speed class added, corrections Figures 7 , 8 and 9.
05-Jun-01
-07
Corrections to Figures 15,16,17 and 18.
10-Dec-2001
-08
M58LV064 part number added for 3.0 to 3.6 voltage range, 120ns speed class
removed, corrections to: Program/Erase Enable Signal description, Read and Clear
Status Register Commands, Set Burst Configuration Register Command and Burst
Configuration Register Tables, Table 10, Read Electronic Signature, descriptions of
Status Register Bits 7, 5, 4, 3 and 1, Table 12 Status Register Bits, Asynchronous
Read AC Characteristics timing t
GLQV
, CFI Tables and Flowchart Figures 25 and 27.
Corrections to Figures 15, 16, 17, 18 and 21, and Tables 20, 21 and 23.
08-Jul-2002
-09
Part numbers M58LW064A and M58LW064B removed from datasheet, parameter
t
PHQV
changed in Table 23.
16-Dec-2002
9.1
Version number format modified (major.minor).
REVISION HISTORY moved to end of document.
M58LV064A and M58LV064B device codes changed. Table 10, Read Electronic
Signature, clarified.
Data Retention information added to Table 11, Program, Erase Times and Program
Erase Endurance Cycles. CFI information (Tables 30, 31, 32 and 34) clarified.
相關(guān)PDF資料
PDF描述
M58LW032C 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110N1 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110N1E 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110N1F 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110N1T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LV064B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150ZA1 功能描述:閃存 4Mx16 or 2Mx32 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LV064B150ZA1T 功能描述:閃存 4Mx16 or 2Mx32 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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