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參數(shù)資料
| 型號(hào)： | M58LV064A150ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| 中文描述： | 64兆位4Mb的x16或功能的2Mb X32號(hào)，統(tǒng)一座，突發(fā)3V電源閃存 |
| 文件頁(yè)數(shù)： | 16/65頁(yè) |
| 文件大小： | 450K |
| 代理商： | M58LV064A150ZA6T |
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M58LV064A, M58LV064B
16/65
first. The Data Inputs/Outputs are latched by the
Command Interface on the rising edge of Chip En-
able or Write Enable, whichever occurs first. Out-
put Enable must remain High, V
IH
, during the
whole Asynchronous Bus Write operation. See
Figures 16 and 18 Asynchronous Latch Controlled
Write AC Waveforms, and Tables 20 and 21,
Asynchronous Write and Latch Controlled Write
AC Characteristics, for details of the timing re-
quirements.
Output Disable.
The Data Inputs/Outputs are in
the high impedance state when the Output Enable
is High.
Standby.
When Chip Enable is High, V
IH
, the
memory enters Standby mode and the Data In-
puts/Outputs pins are placed in the high imped-
ance state regardless of Output Enable or Write
Enable. The Supply Current is reduced to the
Standby Supply Current, I
DD1
.
During Program or Erase operations the memory
will continue to use the Program/Erase Supply
Current, I
DD3
, for Program or Erase operations un-
til the operation completes.
Automatic Low Power.
If there is no change in
the state of the bus for a short period of time during
Asynchronous Bus Read operations the memory
enters Auto Low Power mode where the internal
Supply Current is reduced to the Auto-Standby
Supply Current, I
DD5
. The Data Inputs/Outputs will
still output data if a Bus Read operation is in
progress.
Automatic Low Power is only available in Asyn-
chronous Read modes.
Power-Down.
The memory is in Power-Down
mode when Reset/Power-Down, RP, is Low. The
power consumption is reduced to the Power-Down
level, I
DD2
, and the outputs are high impedance,
independent of Chip Enable, Output Enable or
Write Enable.
Table 2. Asynchronous Bus Operations
Note: 1. X = Don’t Care V
IL
or V
IH
. High = V
IH
or V
HH
.
2. M15 = 1, Bits M15 and M3 are in the Burst Configuration Register.
Bus Operation
Step
E
G
W
RP
M3
(2)
L
A1-A22
DQ0-DQ31
Asynchronous Bus Read
V
IL
V
IL
V
IH
High
0
X
Address
Data Output
Asynchronous Latch
Controlled Bus Read
Address Latch
V
IL
V
IL
V
IH
High
1
V
IL
Address
High Z
Read
V
IL
V
IL
V
IH
High
1
V
IH
X
Data Output
Asynchronous Page Read
V
IL
V
IL
V
IH
High
0
X
Address
Data Output
Asynchronous Bus Write
V
IL
V
IH
V
IL
High
X
V
IL
Address
Data Input
Asynchronous Latch
Controlled Bus Write
Address Latch
V
IL
V
IH
V
IL
High
X
V
IL
Address
Data Input
Output Disable
V
IL
V
IH
V
IH
High
X
X
X
High Z
Standby
V
IH
X
X
High
X
X
X
High Z
Power-Down
X
X
X
V
IL
X
X
X
High Z
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| M58LW032C | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
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| M58LW032C110N1E | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N1F | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LV064B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064B150N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064B150N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064B150ZA1 | 功能描述:閃存 4Mx16 or 2Mx32 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LV064B150ZA1T | 功能描述:閃存 4Mx16 or 2Mx32 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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