參數(shù)資料
型號： M58LV064A150ZA1T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
中文描述： 64兆位4Mb的x16或功能的2Mb X32號，統(tǒng)一座，突發(fā)3V電源閃存
文件頁數(shù)： 55/65頁
文件大?。?/td> 450K
代理商： M58LV064A150ZA1T
55/65
M58LV064A, M58LV064B
Table 32. Device Geometry Definition
Note: 1. For M58LV064B, A1 = Don’t Care. N/A = Not Applicable
2. DQ31-DQ16 are available in the M58LV064B only. They are in the high-impedance state when the device operates In x16 mode.
Table 33. Block Status Register
Note: 1. BA specifies the block address location, A22-A17.
Address
(1)
A22-A1 (M58LV064A)
A22-A2 (M58LV064B)
DQ31-DQ16
(2)
DQ15-DQ0
Description
27h
0000h
0017h
2
n
number of bytes memory Size
28h
N/A
0001h
Device Interface M58LV064A
0000h
0004h
Device Interface M58LV064B
29h
0000h
0000h
2Ah
0000h
0005h
Maximum number of bytes in Write Buffer, 2
n
2Bh
0000h
0000h
2Ch
0000h
0001h
Bit7-0 = number of Erase Block Regions in device
2Dh
0000h
003Fh
Number (n-1) of Erase Blocks of identical size; n=64
2Eh
0000h
0000h
2Fh
0000h
0000h
Erase Block Region Information
x 256 bytes per Erase block (128K bytes)
30h
0000h
0002h
Address
A22-A1 (M58LV064A)
A22-A2 (M58LV064B)
Data
Selected Block Information
(BA+2)h
(1)
bit0
0
Block Unprotected
1
Block Protected
bit7-1
0
Reserved for future features
相關(guān)PDF資料
PDF描述
M58LV064A 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150N1T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150N6T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150ZA6T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW032C 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LV064A150ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150ZA1 功能描述:閃存 4Mx16 or 2Mx32 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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