參數(shù)資料
型號(hào)： M58LV064A150ZA1T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
中文描述： 64兆位4Mb的x16或功能的2Mb X32號(hào)，統(tǒng)一座，突發(fā)3V電源閃存
文件頁(yè)數(shù)： 54/65頁(yè)
文件大?。?/td> 450K
代理商： M58LV064A150ZA1T
M58LV064A, M58LV064B
54/65
Table 31. CFI - Device Voltage and Timing Specification
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
4. For M58LV064B, A1 = Don’t Care.
5. DQ31-DQ16 are available in the M58LV064B only. They are in the high-impedance state when the device operates In x16 mode.
Address
(4)
A22-A1 (M58LV064A)
A22-A2 (M58LV064B)
DQ31-DQ16
(5)
DQ15-DQ0
Description
1Bh
0000h
0030h
(1)
V
DD
Min, 3.0V M58LV064
1Ch
0000h
0036h
(1)
V
DD
max, 3.6V
1Dh
0000h
0000h
(2)
V
PP
min – Not Available
1Eh
0000h
0000h
(2)
V
PP
max – Not Available
1Fh
0000h
0007h
2
n
μs typical time-out for Word Program, DWord Program –
Not Available
20h
0000h
0007h
2
n
μs typical time-out for max buffer write
21h
0000h
000Ah
2
n
ms, typical time-out for Erase Block
22h
0000h
0000h
(3)
2
n
ms, typical time-out for chip erase – Not Available
23h
0000h
0004h
2
n
x typical for Word Program time-out max – (Dword Not
Available)
24h
0000h
0004h
2
n
x typical for buffer write time-out max
25h
0000h
0004h
2
n
x typical for individual block erase time-out maximum
26h
0000h
0000h
(3)
2
n
x typical for chip erase max time-out – Not Available
相關(guān)PDF資料
PDF描述
M58LV064A 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150N1T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150N6T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150ZA6T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW032C 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LV064A150ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150ZA1 功能描述:閃存 4Mx16 or 2Mx32 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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