參數(shù)資料
型號(hào)： M58LV064A150ZA1T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
中文描述： 64兆位4Mb的x16或功能的2Mb X32號(hào)，統(tǒng)一座，突發(fā)3V電源閃存
文件頁數(shù)： 52/65頁
文件大?。?/td> 450K
代理商： M58LV064A150ZA1T
M58LV064A, M58LV064B
52/65
APPENDIX B. COMMON FLASH INTERFACE - CFI
The Common Flash Interface is a JEDEC ap-
proved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the mem-
ory. The system can interface easily with the de-
vice, enabling the software to upgrade itself when
necessary.
When the CFI Query Command (RCFI) is issued
the device enters CFI Query mode and the data
structure is read from the memory. Tables 29, 30,
31, 32, 33 and 34 show the addresses used to re-
trieve the data.
When the M58LV064B is used in x16 mode
, A1
is the Least Significant Address. Toggling A1 will
not change the CFI information available on the
DQ15-DQ0 outputs.
To read the CFI, in the M58LV064A and
M58LV064B devices, in x16 mode, addresses
A23-A1 are used; for the x32 mode of the
M58LV064B device only addresses A23-A2 are
used. To read the CFI, in the M58LV064B device,
in x16 mode, the address offsets shown must be
multiplied by two in hexadecimal.
Table 29. Query Structure Overview
Note: 1. Offset 15h defines P which points to the Primary Algorithm Extended Query Address Table.
2. Offset 19h defines A which points to the Alternate Algorithm Extended Query Address Table.
3. SBA is the Start Base Address for each block.
Offset
Sub-section Name
Description
00h
Manufacturer Code
01h
Device Code
10h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
System Interface Information
Device timing and voltage information
27h
Device Geometry Definition
Flash memory layout
P(h)
(1)
Primary Algorithm-specific Extended Query Table
Additional information specific to the Primary
Algorithm (optional)
A(h)
(2)
Alternate Algorithm-specific Extended Query Table
Additional information specific to the Alternate
Algorithm (optional)
(SBA+02)h
Block Status Register
Block-related Information
相關(guān)PDF資料
PDF描述
M58LV064A 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150N1T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150N6T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150ZA6T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW032C 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LV064A150ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150ZA1 功能描述:閃存 4Mx16 or 2Mx32 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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