參數(shù)資料
型號(hào)： M58LV064A150N6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
中文描述： 64兆位4Mb的x16或功能的2Mb X32號(hào)，統(tǒng)一座，突發(fā)3V電源閃存
文件頁(yè)數(shù)： 45/65頁(yè)
文件大?。?/td> 450K
代理商： M58LV064A150N6T
45/65
M58LV064A, M58LV064B
Table 22. Synchronous Burst Read AC Characteristics
Note: For other timings see Table 17, Asynchronous Bus Read Characteristics.
Symbol
Parameter
Test Condition
M58LV064
Unit
150
t
AVKH
Address Valid to Active Clock Edge
E = V
IL
Min
10
ns
t
AVLH
Address Valid to Latch Enable High
E = V
IL
Min
10
ns
t
BHKH
Burst Address Advance High to Active Clock Edge E = V
IL
, G = V
IL
, L = V
IH
Min
10
ns
t
BLKH
Burst Address Advance Low to Active Clock Edge
E = V
IL
, G = V
IL
, L = V
IH
Min
10
ns
t
ELKH
Chip Enable Low to Active Clock Edge
E = V
IL
Min
10
ns
t
ELLH
Chip Enable Low to Latch Enable High
E = V
IL
Min
10
ns
t
GLKH
Output Enable Low to Valid Clock Edge
E = V
IL
, L = V
IH
Min
20
ns
t
KHAX
Valid Clock Edge to Address Transition
E = V
IL
Min
10
ns
t
KHLL
Valid Clock Edge to Latch Enable Low
E = V
IL
Min
0
ns
t
KHLH
Valid Clock Edge to Latch Enable High
E = V
IL
Min
0
ns
t
KHQX
Valid Clock Edge to Output Transition
E = V
IL
, G = V
IL
, L = V
IH
Min
3
ns
t
LLKH
Latch Enable Low to Valid Clock Edge
E = V
IL
Min
10
ns
t
LLLH
Latch Enable Low to Latch Enable High
E = V
IL
Min
10
ns
t
KHQV
Valid Clock Edge to Output Valid
E = V
IL
, G = V
IL
, L = V
IH
Max
20
ns
t
QVKH
Output Valid to Active Clock Edge
E = V
IL
, G = V
IL
, L = V
IH
Min
5
ns
t
RLKH
Valid Data Ready Low to Valid Clock Edge
E = V
IL
, G = V
IL
, L = V
IH
Min
5
ns
t
KHBL
Active Clock Edge to Burst Address Advance Low
E = V
IL
, G = V
IL
, L = V
IH
Min
0
ns
t
KHBH
Active Clock Edge to Burst Address Advance High E = V
IL
, G = V
IL
, L = V
IH
Min
0
ns
相關(guān)PDF資料
PDF描述
M58LV064A150ZA6T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW032C 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110N1 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110N1E 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110N1F 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LV064A150ZA1 功能描述:閃存 4Mx16 or 2Mx32 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LV064A150ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B150N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
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