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參數(shù)資料
| 型號： | M58LV064A150N6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| 中文描述： | 64兆位4Mb的x16或功能的2Mb X32號，統(tǒng)一座，突發(fā)3V電源閃存 |
| 文件頁數(shù)： | 32/65頁 |
| 文件大?。?/td> | 450K |
| 代理商： | M58LV064A150N6T |
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M58LV064A, M58LV064B
32/65
Table 12. Status Register Bits
Note: 1. For Program operations during Erase Suspend Bit 6 is ‘1’, otherwise Bit 6 is ‘0’.
Operation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
RB
Program/Erase Controller Active
‘0’
Hi-Z
V
OL
Write Buffer not ready
‘0’
Hi-Z
V
OL
Write Buffer ready
‘1’
X
(1)
‘0’
‘0’
‘0’
‘0’
‘0’
Hi-Z
Program suspended
‘1’
X
(1)
‘0’
‘0’
‘0’
‘1’
‘0’
Hi-Z
Program/Block Protect completed successfully
‘1’
X
(1)
‘0’
‘0’
‘0’
‘0’
‘0’
Hi-Z
Program/Block Protect failure due to incorrect command
sequence
’1’
X
(1)
‘1’
‘1’
‘0’
‘0’
‘0’
Hi-Z
Program/Block Protect failure due to V
PP
Error
’1’
X
(1)
‘0’
‘1’
‘1’
‘0’
‘0’
Hi-Z
Program failure due to Block Protection
‘1’
X
(1)
‘0’
‘1’
‘0’
‘0’
‘1’
Hi-Z
Program/Block Protect failure due cell failure or unerased cell
‘1’
(1)
‘0’
‘1’
‘0’
‘0’
‘0’
Hi-Z
Erase suspended
‘1’
‘1’
‘0’
‘0’
‘0’
‘0’
‘0’
Hi-Z
Erase/Blocks Unprotect completed successfully
‘1’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
Hi-Z
Erase/Blocks Unprotect failure due to incorrect command
sequence
‘1’
X
‘1’
‘1’
‘0’
‘0’
‘0’
Hi-Z
Erase/Block Unprotect failure due to V
PP
Error
’1’
‘0’
‘1’
‘0’
‘1’
‘0’
‘0’
Hi-Z
Erase failure due to Block Protection
‘1’
‘0’
‘1’
‘0’
‘0’
‘0’
‘1’
Hi-Z
Erase/Blocks Unprotect failure due to failed cell(s) in block
‘1’
‘0’
‘1’
‘0’
‘0’
‘0’
‘0’
Hi-Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LV064A150ZA6T | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW032C | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N1 | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N1E | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N1F | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LV064A150ZA1 | 功能描述:閃存 4Mx16 or 2Mx32 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LV064A150ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064A150ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064B150N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
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