參數(shù)資料
型號(hào)： M58LV064A150N1T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
中文描述： 64兆位4Mb的x16或功能的2Mb X32號(hào)，統(tǒng)一座，突發(fā)3V電源閃存
文件頁數(shù)： 56/65頁
文件大小： 450K
代理商： M58LV064A150N1T
M58LV064A, M58LV064B
56/65
Table 34. Extended Query information
Address
A22-A1 (M58LV064A)
A22-A2 (M58LV064B)
Note: 1. DQ31-DQ16 are available in the M58LV064B only. They are in the high-impedance state when the device operates In x16 mode.
Address
offset
DQ31-DQ16
(1)
DQ15-DQ0
Description
(P)h
31h
0000h
0050h
0050h; “P”
Query ASCII string - Extended Table 0052h; “R”
0059h; “Y”
(P+1)h
32h
0000h
0052h
(P+2)h
33h
0000h
0049h
(P+3)h
34h
0000h
0031h
Major version number
(P+4)h
35h
0000h
0031h
Minor version number
(P+5)h
36h
0000h
008Eh
Optional Feature: (1=yes, 0=no)
bit0, Chip Erase Supported (0=no)
bit1, Suspend Erase Supported (1=yes)
bit2, Suspend Program Supported (1=yes)
bit3, Protect/Unprotect Supported (1=yes)
bit4, Queue Erase Supported (0=no)
bit5, Instant individual block locking Supported
(0=no)
bit6, Protection Bits Supported (0=no)
bit7, Page Read Supported (1=yes)
bit8, Synchronous Read Supported (1=yes)
Bit 31-9 reserved for future use
(P+6)h
37h
0000h
0001h
(P+7)h
38h
0000h
0000h
(P+8)h
39h
0000h
0000h
(P+9)h
3Ah
0000h
0001h
Supported functions after Suspend:
Program allowed after Erase Suspend (1=yes)
(refer to Commands for other allowed functions)
Bit 7-1 reserved for future use
(P+A)h
3Bh
0000h
0001h
Block Status Register
bit 0 Block Protect Bit Status active (1=yes)
bits 1-15 are reserved
(P+B)h
(P+C)h
3Ch
0000h
0033h
V
DD
OPTIMUM Program/Erase voltage conditions
(P+D)h
3Dh
0000h
0033h
V
PP
OPTIMUM Program/Erase voltage conditions
(P+E)h
3Eh
0000h
00FFh
Not available
(P+F)h
3Fh
0000h
00FFh
Not available
(P+10)h
40h
0000h
00FFh
Not available
(P+11)h
41h
0000h
00FFh
Not available
(P+12)h
42h
0000h
00FFh
Not available
(P+13)h
43h
0000h
0003h
Page Read: 2
n
Bytes (n = bits 0-7)
(P+14)h
44h
0000h
0004h
Synchronous mode configuration fields
(P+15)h
45h
0000h
0000h
n where 2
n+1
is the number of Words/Double-Words
for the burst Length (= 2)
(P+16)h
46h
0000h
0001h
n where 2
n+1
is the number of Words/Double-Words
for the burst Length (= 4)
(P+17)h
47h
0000h
0002h
n where 2
n+1
is the number of Words/Double-Words
for the burst Length (= 8) (x16 mode only)
(P+18)h
48h
0000h
0007h
Burst Continuous
相關(guān)PDF資料
PDF描述
M58LV064A150N6T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150ZA6T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW032C 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110N1 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032C110N1E 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LV064A150N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150ZA1 功能描述:閃存 4Mx16 or 2Mx32 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LV064A150ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*