參數資料
型號: M58LT128GST
廠商: 意法半導體
英文描述: 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述: 128Mbit(8兆x16插槽,多銀行,多層次,多突發(fā))1.8V電源安全閃存
文件頁數: 87/98頁
文件大小: 693K
代理商: M58LT128GST
M58LT128GST, M58LT128GSB
13 Part Numbering
87/98
Figure 23. Erase Suspend & Resume Flowchart and Pseudo Code
1.
The Read Status Register command (Write 70h) can be issued just before or just after the Erase Resume command.
Write 70h
AI10116
Read Status
Register
YES
NO
SR7 = 1
YES
NO
SR6 = 1
Erase Continues with
Bank in Read Status
Register Mode
Write D0h
Read data from
another block
Start
Write B0h
Erase Complete
Write FFh
Read Status Register
Write FFh
erase_suspend_command ( ) {
writeToFlash (bank_address, 0xB0) ;
writeToFlash (bank_address, 0x70) ;
/* read status register to check if
erase has already completed */
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR6==0) /*erase completed */
{ writeToFlash (bank_address, 0xFF) ;
read_data ( ) ;
/*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
}
else
{ writeToFlash (bank_address, 0xFF) ;
read_program_data ( );
/*read or program data from another address*/
writeToFlash (bank_address, 0xD0) ;
/*write 0xD0 to resume erase*/
writeToFlash (bank_address, 0x70) ;
/*read status register to check if erase has completed */
}
}
Write 70h
(1)
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