參數(shù)資料
型號(hào): M58LT128GST
廠商: 意法半導(dǎo)體
英文描述: 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述: 128Mbit(8兆x16插槽,多銀行,多層次,多突發(fā))1.8V電源安全閃存
文件頁(yè)數(shù): 83/98頁(yè)
文件大?。?/td> 693K
代理商: M58LT128GST
M58LT128GST, M58LT128GSB
13 Part Numbering
83/98
Appendix C Flowcharts and Pseudo Codes
Figure 19. Program Flowchart and Pseudo Code
1.
Status check of SR1 (Protected Block), SR3 (V
PP
Invalid) and SR4 (Program Error) can be made after each program
operation or after a sequence.
If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
Any address within the bank can equally be used.
2.
3.
Write 40h or 10h (3)
AI06170b
Start
Write Address
& Data
Read Status
Register (3)
YES
NO
SR7 = 1
YES
NO
SR3 = 0
NO
SR4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
program_command (addressToProgram, dataToProgram) {:
writeToFlash (addressToProgram, 0x40);
/*writeToFlash (addressToProgram, 0x10);*/
/*see note (3)*/
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
do {
status_register=readFlash (addressToProgram);
"see note (3)";
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
YES
End
YES
NO
SR1 = 0
Program to Protected
Block Error (1, 2)
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
}
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