- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359080 > M58LT128GST (意法半導(dǎo)體) 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories PDF資料下載
參數(shù)資料
| 型號(hào)： | M58LT128GST |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁(yè)數(shù)： | 79/98頁(yè) |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GST |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)當(dāng)前第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)
M58LT128GST, M58LT128GSB
13 Part Numbering
79/98
Table 44.
Bank and Erase Block Region 1 Information
Flash memory (top)
Flash memory
(bottom)
Description
Offset
Data
Offset
Data
(P+24)h = 12Eh
0Fh
(P+24)h = 12Eh
01h
Number of identical banks within Bank Region 1
(P+25)h = 12Fh
00h
(P+25)h = 12Fh
00h
(P+26)h = 130h
11h
(P+26)h = 130h
11h
Number of program or erase operations allowed in Bank
Region 1:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+27)h = 131h
00h
(P+27)h = 131h
00h
Number of program or erase operations allowed in other
banks while a bank in same region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+28)h = 132h
00h
(P+28)h = 132h
00h
Number of program or erase operations allowed in other
banks while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+29)h = 133h
01h
(P+29)h = 133h
02h
Types of erase block regions in Bank Region 1
n = number of erase block regions with contiguous same-size
erase blocks.
Symmetrically blocked banks have one blocking region
(2)
.
(P+2A)h = 134h
07h
(P+2A)h = 134h
03h
Bank Region 1 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+2B)h = 135h
00h
(P+2B)h = 135h
00h
(P+2C)h = 136h
00h
(P+2C)h = 136h
80h
(P+2D)h = 137h
02h
(P+2D)h = 137h
00h
(P+2E)h = 138h
64h
(P+2E)h = 138h
64h
Bank Region 1 (Erase Block Type 1)
Minimum block erase cycles × 1000
(P+2F)h = 139h
00h
(P+2F)h = 139h
00h
(P+30)h = 13Ah
02h
(P+30)h = 13Ah
02h
Bank Region 1 (Erase Block Type 1): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
(P+31)h = 13Bh
03h
(P+31)h = 13Bh
03h
Bank Region 1 (Erase Block Type 1): Page mode and
Synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LV064A150ZA1T | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064A | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064A150N1T | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064A150N6T | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064A150ZA6T | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GST1ZA5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
| M58LT128HSB8ZA6 | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。