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參數(shù)資料
| 型號： | M58LT128GST |
| 廠商： | 意法半導體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 25/98頁 |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GST |
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M58LT128GST, M58LT128GSB
4 Command Interface
25/98
4.10 Program/Erase Suspend command
The Program/Erase Suspend command is used to pause a Program or Block Erase operation.
The command can be addressed to any bank.
The Program/Erase Resume command is required to restart the suspended operation.
One bus write cycle is required to issue the Program/Erase Suspend command. Once the
Program/Erase Controller has paused bits SR7, SR6 and/ or SR2 of the Status Register will be
set to ‘1’.
The following commands are accepted during Program/Erase Suspend:
Program/Erase Resume
Read Array (data from erase-suspended block or program-suspended Word is not valid)
Read Status Register
Read Electronic Signature
Read CFI Query.
●
●
●
●
●
In addition, if the suspended operation was a Block Erase then the following commands are
also accepted:
Clear Status Register
Program (except in erase-suspended block)
Buffer Program (except in erase suspended blocks)
●
●
●
It is possible to accumulate multiple suspend operations. For example: suspend an erase
operation, start a program operation, suspend the program operation, then read the array.
If a Program command is issued during a Block Erase Suspend, the erase operation cannot be
resumed until the program operation has completed.
The Program/Erase Suspend command does not change the read mode of the banks. If the
suspended bank was in Read Status Register, Read Electronic signature or Read CFI Query
mode the bank remains in that mode and outputs the corresponding data.
Refer to Dual Operations section for detailed information about simultaneous operations
allowed during Program/Erase Suspend.
During a Program/Erase Suspend, the device can be placed in standby mode by taking Chip
Enable to V
IH
. Program/erase is aborted if Reset, RP, goes to V
IL
.
See
Appendix C
,
Figure 21: Program Suspend & Resume Flowchart and Pseudo Code
, and
Figure 23: Erase Suspend & Resume Flowchart and Pseudo Code
, for flowcharts for using the
Program/Erase Suspend command.
4.11 Program/Erase Resume command
The Program/Erase Resume command is used to restart the program or erase operation
suspended by the Program/Erase Suspend command. One Bus Write cycle is required to issue
the command. The command can be issued to any address.
The Program/Erase Resume command does not change the read mode of the banks. If the
suspended bank was in Read Status Register, Read Electronic signature or Read CFI Query
mode the bank remains in that mode and outputs the corresponding data.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GST1ZA5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
| M58LT128HSB8ZA6 | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays |
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