參數(shù)資料
型號(hào)： M58LT128GST1ZA5F
廠商： 意法半導(dǎo)體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁數(shù)： 75/98頁
文件大?。?/td> 693K
代理商： M58LT128GST1ZA5F
M58LT128GST, M58LT128GSB
13 Part Numbering
75/98
Table 39.
Device Geometry Definition
023h
0001h
Maximum time-out for word program = 2
n
times typical
512μs
024h
0001h
Maximum time-out for Buffer Program = 2
n
times typical
1024μs
025h
0002h
Maximum time-out per individual block erase = 2
n
times typical
4s
026h
0000h
Maximum time-out for chip erase = 2
n
times typical
NA
Offset
Data
Description
Value
027h
0018h
Device Size = 2
n
in number of bytes
16 MBytes
028h
029h
0001h
0000h
Flash Device Interface Code description
x16
Async.
02Ah
02Bh
0006h
0000h
Maximum number of bytes in multi-byte program or page = 2
n
64 Bytes
02Ch
0002h
Number of identical sized erase block regions within the device
bit 7 to 0 = x = number of Erase Block Regions
2
T
02Dh
02Eh
007Eh
0000h
Erase Block Region 1 Information
Number of identical-size erase blocks = 007Eh+1
127
02Fh
030h
0000h
0002h
Erase Block Region 1 Information
Block size in Region 1 = 0200h * 256 Byte
128 KByte
031h
032h
0003h
0000h
Erase Block Region 2 Information
Number of identical-size erase blocks = 0003h+1
4
033h
034h
0080h
0000h
Erase Block Region 2 Information
Block size in Region 2 = 0080h * 256 Byte
32 KByte
035h
038h
Reserved
Reserved for future erase block region information
NA
B
02Dh
02Eh
0003h
0000h
Erase Block Region 1 Information
Number of identical-size erase block = 0003h+1
4
02Fh
030h
0080h
0000h
Erase Block Region 1 Information
Block size in Region 1 = 0080h * 256 bytes
32 KBytes
031h
032h
007Eh
0000h
Erase Block Region 2 Information
Number of identical-size erase block = 007Eh+1
127
033h
034h
0000h
0002h
Erase Block Region 2 Information
Block size in Region 2 = 0200h * 256 bytes
128 KBytes
035h
038h
Reserved
Reserved for future erase block region information
NA
Offset
Data
Description
Value
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LT128HSB 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
M58LT128HSB8ZA6 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays
M58LT128HSB8ZA6E 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
M58LT128HSB8ZA6F 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
M58LT128HSB8ZA6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
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