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參數(shù)資料
| 型號(hào)： | M58LT128GST1ZA5F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 73/98頁 |
| 文件大小： | 693K |
| 代理商： | M58LT128GST1ZA5F |
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M58LT128GST, M58LT128GSB
13 Part Numbering
73/98
Appendix B Common Flash Interface
The Common Flash Interface is a JEDEC approved, standardized data structure that can be
read from the Flash memory device. It allows a system software to query the device to
determine various electrical and timing parameters, density information and functions
supported by the memory. The system can interface easily with the device, enabling the
software to upgrade itself when necessary.
When the Read CFI Query Command is issued the device enters CFI Query mode and the
data structure is read from the memory.
Table 36
,
Table 37
,
Table 38
,
Table 39
,
Table 40
,
Table 42
,
Table 43
,
Table 44
and
Table 45
show the addresses used to retrieve the data. The
Query data is always presented on the lowest order data outputs (DQ0-DQ7), the other outputs
(DQ8-DQ15) are set to 0.
The CFI data structure also contains a security area where a 64 bit unique security number is
written (see
Figure 4: Protection Register Map
).
This area can be accessed only in Read mode
by the final user. It is impossible to change the security number after it has been written by ST.
Issue a Read Array command to return to Read mode.
Table 36.
Query Structure Overview
1.
The Flash memory display the CFI data structure when CFI Query command is issued. In this table are listed the main sub-
sections detailed in
Table 37
,
Table 38
,
Table 39
and
Table 40
. Query data is always presented on the lowest order data
outputs.
Offset
Sub-section Name
Description
000h
Reserved
Reserved for algorithm-specific information
010h
CFI Query Identification String
Command set ID and algorithm data offset
01Bh
System Interface Information
Device timing & voltage information
027h
Device Geometry Definition
Flash device layout
P
Primary Algorithm-specific Extended Query table
Additional information specific to the Primary
Algorithm (optional)
A
Alternate Algorithm-specific Extended Query table
Additional information specific to the Alternate
Algorithm (optional)
080h
Security Code Area
Lock Protection Register
Unique device Number and
User Programmable OTP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GST | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LV064A150ZA1T | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064A | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
| M58LT128HSB8ZA6 | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays |
| M58LT128HSB8ZA6E | 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
| M58LT128HSB8ZA6F | 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
| M58LT128HSB8ZA6T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
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