參數(shù)資料
型號(hào)： M58LT128GST1ZA5F
廠商： 意法半導(dǎo)體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁(yè)數(shù)： 32/98頁(yè)
文件大?。?/td> 693K
代理商： M58LT128GST1ZA5F
5 Status Register
M58LT128GST, M58LT128GSB
32/98
5.3
Erase Status Bit (SR5)
The Erase Status bit is used to identify if there was an error during a block or bank erase
operation.
When the Erase Status bit is High (set to ‘1’), the Program/Erase Controller has applied the
maximum number of pulses to the block or bank and still failed to verify that it has erased
correctly.
The Erase Status bit should be read once the Program/Erase Controller Status bit is High
(Program/Erase Controller inactive).
Once set High, the Erase Status bit must be set Low by a Clear Status Register command or a
hardware reset before a new erase command is issued, otherwise the new command will
appear to fail.
5.4
Program Status Bit (SR4)
The Program Status bit is used to identify if there was an error during a program operation.
The Program Status bit should be read once the Program/Erase Controller Status bit is High
(Program/Erase Controller inactive).
When the Program Status bit is High (set to ‘1’), the Program/Erase Controller has applied the
maximum number of pulses to the Word and still failed to verify that it has programmed
correctly.
Attempting to program a '1' to an already programmed bit while V
PP
= V
PPH
will also set the
Program Status bit High. If V
PP
is different from V
PPH
, SR4 remains Low (set to '0') and the
attempt is not shown.
Once set High, the Program Status bit must be set Low by a Clear Status Register command or
a hardware reset before a new program command is issued, otherwise the new command will
appear to fail.
5.5
V
PP
Status Bit (SR3)
The V
PP
Status bit is used to identify an invalid voltage on the V
PP
pin during program and
erase operations. The V
PP
pin is only sampled at the beginning of a program or erase
operation. Program and erase operations are not guaranteed if V
PP
becomes invalid during an
operation.
When the V
PP
Status bit is Low (set to ‘0’), the voltage on the V
PP
pin was sampled at a valid
voltage.
when the V
PP
Status bit is High (set to ‘1’), the V
PP
pin has a voltage that is below the V
PP
Lockout Voltage, V
PPLK
, the memory is protected and program and erase operations cannot be
performed.
Once set High, the V
PP
Status bit must be set Low by a Clear Status Register command or a
hardware reset before a new program or erase command is issued, otherwise the new
command will appear to fail.
相關(guān)PDF資料
PDF描述
M58LT128GST 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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M58LT128HSB8ZA6 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays
M58LT128HSB8ZA6E 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
M58LT128HSB8ZA6F 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
M58LT128HSB8ZA6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
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