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參數(shù)資料
| 型號： | M58LT128GST1ZA5F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 21/98頁 |
| 文件大小： | 693K |
| 代理商： | M58LT128GST1ZA5F |
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M58LT128GST, M58LT128GSB
4 Command Interface
21/98
4.6
Block Erase command
The Block Erase command is used to erase a block. It sets all the bits within the selected block
to ’1’. All previous data in the block is lost.
If the block is protected then the erase operation will abort, the data in the block will not be
changed and the Status Register will output the error.
Two Bus Write cycles are required to issue the command.
1.
The first bus cycle sets up the Block Erase command.
2.
The second latches the block address and starts the Program/Erase Controller.
If the second bus cycle is not the Block Erase Confirm code, Status Register bits SR4 and SR5
are set and the command is aborted.
Once the command is issued the bank enters Read Status Register mode and any read
operation within the addressed bank will output the contents of the Status Register. A Read
Array command is required to return the bank to Read Array mode.
During Block Erase operations the bank containing the block being erased will only accept the
Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the
Program/Erase Suspend command, all other commands will be ignored.
The Block Erase operation aborts if Reset, RP, goes to V
IL
. As data integrity cannot be
guaranteed when the Block Erase operation is aborted, the block must be erased again.
Refer to Dual Operations section for detailed information about simultaneous operations
allowed in banks not being erased.
Typical Erase times are given in
Table 16: Program/Erase Times and Endurance Cycles
.
See
Appendix C
,
Figure 22: Block Erase Flowchart and Pseudo Code
, for a suggested
flowchart for using the Block Erase command.
4.7
Program command
The program command is used to program a single Word to the memory array.
Two Bus Write cycles are required to issue the Program Command.
1.
The first bus cycle sets up the Program command.
2.
The second latches the address and data to be programmed and starts the Program/
Erase Controller.
Once the programming has started, read operations in the bank being programmed output the
Status Register content.
During a Program operation, the bank containing the Word being programmed will only accept
the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the
Program/Erase Suspend command, all other commands will be ignored. A Read Array
command is required to return the bank to Read Array mode.
Refer to Dual Operations section for detailed information about simultaneous operations
allowed in banks not being programmed.
Typical Program times are given in
Table 16: Program/Erase Times and Endurance Cycles
.
The Program operation aborts if Reset, RP, goes to V
IL
. As data integrity cannot be guaranteed
when the Program operation is aborted, the Word must be reprogrammed.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GST | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LV064A150ZA1T | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064A | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LV064A150N1T | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
| M58LT128HSB8ZA6 | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays |
| M58LT128HSB8ZA6E | 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
| M58LT128HSB8ZA6F | 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
| M58LT128HSB8ZA6T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
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