參數(shù)資料
型號(hào)： M58LT128GST1ZA5E
廠商： 意法半導(dǎo)體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁(yè)數(shù)： 84/98頁(yè)
文件大?。?/td> 693K
代理商： M58LT128GST1ZA5E
13 Part Numbering
M58LT128GST, M58LT128GSB
84/98
Figure 20. Buffer Program Flowchart and Pseudo Code
1.
2.
n + 1 is the number of data being programmed.
Next Program data is an element belonging to buffer_Program[].data; Next Program address is an element belonging to
buffer_Program[].address.
Routine for Error Check by reading SR3, SR4 and SR1.
3.
Buffer Program E8h
Command,
Start Address
AI08913b
Start
Write Buffer Data,
Start Address
YES
X = n
End
NO
Write n
(1)
,
Start Address
X = 0
Write Next Buffer Data,
Next Program Address
X = X + 1
Program
Buffer to Flash
Confirm D0h
Read Status
Register
NO
SR7 = 1
YES
Full Status
Register Check
(3)
Read Status
Register
NO
SR7 = 1
YES
Buffer_Program_command (Start_Address, n, buffer_Program[] )
/* buffer_Program [] is an array structure used to store the address and
data to be programmed to the Flash memory (the address must be within
the segment Start Address and Start Address+n) */
{
do {writeToFlash (
Start
_Address, 0xE8) ;
status_register=readFlash (
Start
_Address);
} while (status_register.SR7==0);
writeToFlash (
Start
_Address, n);
writeToFlash (buffer_Program[0].address, buffer_Program[0].data);
/*buffer_Program[0].address is the start address*/
x = 0;
while (x<n)
{ writeToFlash (buffer_Program[x+1].address, buffer_Program[x+1].data);
x++;
}
writeToFlash (
Start
_Address, 0xD0);
do {status_register=readFlash (
Start
_Address);
} while (status_register.SR7==0);
full_status_register_check();
}
相關(guān)PDF資料
PDF描述
M58LT128GST1ZA5F 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LV064A150ZA1T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LT128GST1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128HSB 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
M58LT128HSB8ZA6 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays
M58LT128HSB8ZA6E 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
M58LT128HSB8ZA6F 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
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