參數(shù)資料
型號： M58LT128GST1ZA5E
廠商： 意法半導(dǎo)體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁數(shù)： 81/98頁
文件大?。?/td> 693K
代理商： M58LT128GST1ZA5E
M58LT128GST, M58LT128GSB
13 Part Numbering
81/98
Table 45.
Bank and Erase Block Region 2 Information
Flash memory (top)
Flash memory (bottom)
Description
Offset
Data
Offset
Data
(P+32)h = 13Ch
01h
(P+3A)h = 144h
0Fh
Number of identical banks within Bank Region 2
(P+33)h = 13Dh
00h
(P+3B)h = 145h
00h
(P+34)h = 13Eh
11h
(P+3C)h = 146h
11h
Number of program or erase operations allowed in Bank
Region 2:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+35)h = 13Fh
00h
(P+3D)h = 147h
00h
Number of program or erase operations allowed in other
banks while a bank in this region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+36)h = 140h
00h
(P+3E)h = 148h
00h
Number of program or erase operations allowed in other
banks while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+37)h = 141h
02h
(P+3F)h = 149h
01h
Types of erase block regions in Bank Region 2
n = number of erase block regions with contiguous same-
size erase blocks.
Symmetrically blocked banks have one blocking region.
(2)
(P+38)h = 142h
06h
(P+40)h = 14Ah
07h
Bank Region 2 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+39)h = 143h
00h
(P+41)h = 14Bh
00h
(P+3A)h = 144h
00h
(P+42)h = 14Ch
00h
(P+3B)h = 145h
02h
(P+43)h = 14Dh
02h
(P+3C)h = 146h
64h
(P+44)h = 14Eh
64h
Bank Region 2 (Erase Block Type 1)
Minimum block erase cycles × 1000
(P+3D)h = 147h
00h
(P+45)h = 14Fh
00h
(P+3E)h = 148h
02h
(P+46)h = 150h
02h
Bank Region 2 (Erase Block Type 1): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
(P+3F)h = 149h
03h
(P+47)h = 151h
03h
Bank Region 2 (Erase Block Type 1):Page mode and
Synchronous mode capabilities (defined in
Table 42
)
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+40)h = 14Ah
03h
Bank Region 2 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+41)h = 14Bh
00h
(P+42)h = 14Ch
80h
(P+43)h = 14Dh
00h
相關(guān)PDF資料
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M58LT128GST1ZA5F 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LT128GST1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128HSB 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
M58LT128HSB8ZA6 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays
M58LT128HSB8ZA6E 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
M58LT128HSB8ZA6F 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
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