參數(shù)資料
型號： M58LT128GST1ZA5E
廠商： 意法半導體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁數(shù)： 46/98頁
文件大?。?/td> 693K
代理商： M58LT128GST1ZA5E
8 Dual Operations and Multiple Bank architecture
M58LT128GST, M58LT128GSB
46/98
Table 14.
Dual Operations Allowed In Same Bank
Table 15.
Dual Operation Limitations
Status of bank
Commands allowed in same bank
Read
Array
Read
Status
Register
Read CFI
Query
Read
Electronic
Signature
Program,
Buffer
Program
Block
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
–
(1)
1.
The Read Array command is accepted but the data output is not guaranteed until the Program or Erase has completed.
Yes
Yes
Yes
–
–
Yes
–
Erasing
–
(1)
Yes
Yes
Yes
–
–
Yes
–
Program
Suspended
Yes
(2)
2.
Not allowed in the Word that is being erased or programmed.
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
(2)
Yes
Yes
Yes
Yes
(2)
–
–
Yes
Current Status
Commands allowed
Read CFI / Electronic
Signature
Read Parameter
Blocks
Read Main Blocks
Located in
Parameter Bank
Not Located in
Parameter Bank
Programming / Erasing
Parameter Blocks
No
No
No
Yes
Programming
/ Erasing Main
Blocks
Located in
Parameter
Bank
No
No
No
Yes
Not Located in
Parameter
Bank
No
Yes
Yes
In Different Bank
Only
相關PDF資料
PDF描述
M58LT128GST1ZA5F 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LV064A150ZA1T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LV064A150N1T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
相關代理商/技術參數(shù)
參數(shù)描述
M58LT128GST1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128HSB 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
M58LT128HSB8ZA6 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays
M58LT128HSB8ZA6E 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
M58LT128HSB8ZA6F 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR)
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*