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參數(shù)資料
| 型號(hào)： | M58LT128GST1ZA5 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁(yè)數(shù)： | 84/98頁(yè) |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GST1ZA5 |
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13 Part Numbering
M58LT128GST, M58LT128GSB
84/98
Figure 20. Buffer Program Flowchart and Pseudo Code
1.
2.
n + 1 is the number of data being programmed.
Next Program data is an element belonging to buffer_Program[].data; Next Program address is an element belonging to
buffer_Program[].address.
Routine for Error Check by reading SR3, SR4 and SR1.
3.
Buffer Program E8h
Command,
Start Address
AI08913b
Start
Write Buffer Data,
Start Address
YES
X = n
End
NO
Write n
(1)
,
Start Address
X = 0
Write Next Buffer Data,
Next Program Address
X = X + 1
Program
Buffer to Flash
Confirm D0h
Read Status
Register
NO
SR7 = 1
YES
Full Status
Register Check
(3)
Read Status
Register
NO
SR7 = 1
YES
Buffer_Program_command (Start_Address, n, buffer_Program[] )
/* buffer_Program [] is an array structure used to store the address and
data to be programmed to the Flash memory (the address must be within
the segment Start Address and Start Address+n) */
{
do {writeToFlash (
Start
_Address, 0xE8) ;
status_register=readFlash (
Start
_Address);
} while (status_register.SR7==0);
writeToFlash (
Start
_Address, n);
writeToFlash (buffer_Program[0].address, buffer_Program[0].data);
/*buffer_Program[0].address is the start address*/
x = 0;
while (x<n)
{ writeToFlash (buffer_Program[x+1].address, buffer_Program[x+1].data);
x++;
}
writeToFlash (
Start
_Address, 0xD0);
do {status_register=readFlash (
Start
_Address);
} while (status_register.SR7==0);
full_status_register_check();
}
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GSB | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GS | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5F | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
| M58LT128HSB8ZA6 | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays |
| M58LT128HSB8ZA6E | 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
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