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參數(shù)資料
| 型號(hào)： | M58LT128GST1ZA5 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁(yè)數(shù)： | 80/98頁(yè) |
| 文件大小： | 693K |
| 代理商： | M58LT128GST1ZA5 |
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13 Part Numbering
M58LT128GST, M58LT128GSB
80/98
1.
2.
The variable P is a pointer which is defined at CFI offset 015h.
Bank Regions. There are two Bank Regions, see
Table 30
to
Table 35
.
(P+32)h = 13Ch
06h
Bank Region 1 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized
erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+33)h = 13Dh
00h
(P+34)h = 13Eh
00h
(P+35)h = 13Fh
02h
(P+36)h = 140h
64h
Bank Region 1 (Erase Block Type 2)
Minimum block erase cycles × 1000
(P+37)h = 141h
00h
(P+38)h = 142h
02h
Bank Regions 1 (Erase Block Type 2): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
(P+39)h = 143h
03h
Bank Region 1 (Erase Block Type 2): Page mode and
Synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
Flash memory (top)
Flash memory
(bottom)
Description
Offset
Data
Offset
Data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GSB | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GS | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5F | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
| M58LT128HSB8ZA6 | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays |
| M58LT128HSB8ZA6E | 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
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