參數(shù)資料
型號(hào)： M58LT128GST1ZA5
廠商： 意法半導(dǎo)體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁(yè)數(shù)： 33/98頁(yè)
文件大?。?/td> 693K
代理商： M58LT128GST1ZA5
M58LT128GST, M58LT128GSB
5 Status Register
33/98
5.6
Program Suspend Status Bit (SR2)
The Program Suspend Status bit indicates that a program operation has been suspended in the
addressed block. The Program Suspend Status bit should only be considered valid when the
Program/Erase Controller Status bit is High (Program/Erase Controller inactive).
When the Program Suspend Status bit is High (set to ‘1’), a Program/Erase Suspend command
has been issued and the memory is waiting for a Program/Erase Resume command.
SR2 is set within the Program Suspend Latency time of the Program/Erase Suspend command
being issued therefore the memory may still complete the operation rather than entering the
Suspend mode.
When a Program/Erase Resume command is issued the Program Suspend Status bit returns
Low.
SR1. Reserved.
5.7
Bank Write/Multiple Word Program Status Bit (SR0)
The Bank Write Status bit indicates whether the addressed bank is programming or erasing. In
Buffer Enhanced Factory Program mode the Multiple Word Program bit shows if the device is
ready to accept a new Word to be programmed to the memory array.
The Bank Write Status bit should only be considered valid when the Program/Erase Controller
Status SR7 is Low (set to ‘0’).
When both the Program/Erase Controller Status bit and the Bank Write Status bit are Low (set
to ‘0’), the addressed bank is executing a program or erase operation. When the Program/Erase
Controller Status bit is Low (set to ‘0’) and the Bank Write Status bit is High (set to ‘1’), a
program or erase operation is being executed in a bank other than the one being addressed.
In Buffer Enhanced Factory Program mode if Multiple Word Program Status bit is Low (set to
‘0’), the device is ready for the next Word, if the Multiple Word Program Status bit is High (set to
‘1’) the device is not ready for the next Word.
For further details on how to use the Status Register, see the Flowcharts and Pseudo codes
provided in
Appendix C
.
相關(guān)PDF資料
PDF描述
M58LT128GSB 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GS 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5E 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5F 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LT128GST1ZA5E 制造商:STMicroelectronics 功能描述:
M58LT128GST1ZA5F 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128HSB 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
M58LT128HSB8ZA6 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays
M58LT128HSB8ZA6E 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱(chēng):CAV24C32WE-GT3OSTR
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