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參數(shù)資料
| 型號： | M58LT128GST1ZA5 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 18/98頁 |
| 文件大小： | 693K |
| 代理商： | M58LT128GST1ZA5 |
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4 Command Interface
M58LT128GST, M58LT128GSB
18/98
4
Command Interface
All Bus Write operations to the memory are interpreted by the Command Interface. Commands
consist of one or more sequential Bus Write operations. An internal Program/Erase Controller
handles all timings and verifies the correct execution of the program and erase commands. The
Program/Erase Controller provides a Status Register whose output may be read at any time to
monitor the progress or the result of the operation.
The Command Interface is reset to read mode when power is first applied, when exiting from
Reset or whenever V
DD
is lower than V
LKO
. Command sequences must be followed exactly.
Any invalid combination of commands will be ignored.
Refer to
Table 4: Command Codes
,
Table 5: Standard Commands
,
Table 6: Factory Program
Command
, and
Appendix D: Command Interface state tables
, for a summary of the Command
Interface.
Note: The security features are described in a dedicated Application Note. Please contact
STMicroelectronics for further details.
Table 4.
Command Codes
Hex Code
Command
03h
Set Configuration Register Confirm
10h
Alternative Program Setup
20h
Block Erase Setup
40h
Program Setup
50h
Clear Status Register
70h
Read Status Register
80h
Buffer Enhanced Factory Program
90h
Read Electronic Signature
98h
Read CFI Query
B0h
Program/Erase Suspend
C0h
Program Register Program
D0h
Program/Erase Resume, Block Erase Confirm,
or Buffer Program Confirm
E8h
Buffer Program
FFh
Read Array
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GSB | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GS | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5F | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
| M58LT128HSB8ZA6 | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 85ns 64-Pin TBGA Tray 制造商:Micron Technology Inc 功能描述:STD FLASH - Trays |
| M58LT128HSB8ZA6E | 功能描述:IC FLASH 128MBIT 85NS 64TBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
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