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參數(shù)資料
| 型號： | M58LT128GSB1ZA5F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 95/98頁 |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GSB1ZA5F |
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M58LT128GST, M58LT128GSB
13 Part Numbering
95/98
Table 49.
Command Interface States - Lock Table, Next Output State
Current CI State
Command Input
(1)(2)
1.
The output state shows the type of data that appears at the outputs if the bank address is the same as the command
address. A bank can be placed in Read Array, Read Status Register, Read Electronic Signature or Read CFI mode,
depending on the command issued. Each bank remains in its last output state until a new command is issued to that bank.
The next state does not depend on the bank's output state.
Lock/CR Setup
(60h)
(3)
Set CR Confirm
(03h)
BEFP Exit (FFFFh)
(4)
Illegal Command
(5)
WSM Operation Completed
Program Setup
Status Register
Output Unchanged
Erase Setup
Program in Erase
Suspend
BEFP Setup
BEFP Busy
Buffer Program Setup
Buffer Program Load 1
Buffer Program Load 2
Buffer Program Confirm
Buffer Program Setup in
Erase Suspend
Buffer Program Load 1
in Erase Suspend
Buffer Program Load 2
in Erase Suspend
Buffer Program Confirm
in Erase Suspend
Lock/CR Setup
Status Register
Array
Status Register
Lock/CR Setup in Erase
Suspend
Ready
Output Unchanged
Array
Output Unchanged
Program Busy
Erase Busy
Buffer Program Busy
Program/Erase Suspend
Buffer Program Suspend
Program Busy in Erase
Suspend
Buffer Program Busy in
Erase Suspend
Program Suspend in
Erase Suspend
Buffer Program Suspend
in Erase Suspend
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GST1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GS | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GST | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
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