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參數(shù)資料
| 型號： | M58LT128GSB1ZA5F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 75/98頁 |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GSB1ZA5F |
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M58LT128GST, M58LT128GSB
13 Part Numbering
75/98
Table 39.
Device Geometry Definition
023h
0001h
Maximum time-out for word program = 2
n
times typical
512μs
024h
0001h
Maximum time-out for Buffer Program = 2
n
times typical
1024μs
025h
0002h
Maximum time-out per individual block erase = 2
n
times typical
4s
026h
0000h
Maximum time-out for chip erase = 2
n
times typical
NA
Offset
Data
Description
Value
027h
0018h
Device Size = 2
n
in number of bytes
16 MBytes
028h
029h
0001h
0000h
Flash Device Interface Code description
x16
Async.
02Ah
02Bh
0006h
0000h
Maximum number of bytes in multi-byte program or page = 2
n
64 Bytes
02Ch
0002h
Number of identical sized erase block regions within the device
bit 7 to 0 = x = number of Erase Block Regions
2
T
02Dh
02Eh
007Eh
0000h
Erase Block Region 1 Information
Number of identical-size erase blocks = 007Eh+1
127
02Fh
030h
0000h
0002h
Erase Block Region 1 Information
Block size in Region 1 = 0200h * 256 Byte
128 KByte
031h
032h
0003h
0000h
Erase Block Region 2 Information
Number of identical-size erase blocks = 0003h+1
4
033h
034h
0080h
0000h
Erase Block Region 2 Information
Block size in Region 2 = 0080h * 256 Byte
32 KByte
035h
038h
Reserved
Reserved for future erase block region information
NA
B
02Dh
02Eh
0003h
0000h
Erase Block Region 1 Information
Number of identical-size erase block = 0003h+1
4
02Fh
030h
0080h
0000h
Erase Block Region 1 Information
Block size in Region 1 = 0080h * 256 bytes
32 KBytes
031h
032h
007Eh
0000h
Erase Block Region 2 Information
Number of identical-size erase block = 007Eh+1
127
033h
034h
0000h
0002h
Erase Block Region 2 Information
Block size in Region 2 = 0200h * 256 bytes
128 KBytes
035h
038h
Reserved
Reserved for future erase block region information
NA
Offset
Data
Description
Value
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GST1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GS | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GST | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
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