參數(shù)資料
型號: M58LT128GSB1ZA5F
廠商: 意法半導體
英文描述: 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述: 128Mbit(8兆x16插槽,多銀行,多層次,多突發(fā))1.8V電源安全閃存
文件頁數(shù): 28/98頁
文件大?。?/td> 693K
代理商: M58LT128GSB1ZA5F
4 Command Interface
M58LT128GST, M58LT128GSB
28/98
Table 6.
Factory Program Command
Table 7.
Electronic Signature Codes
Command
Phase
C
Bus Write Operations
(1)
1.
WA=Word Address in targeted bank, BKA= Bank Address, PD=Program Data, BA=Block Address, X = Don’t Care.
1st
2nd
3rd
Final -1
Final
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Buffer
Enhanced
Factory
Program
Setup
2
BKA or
WA
(2)
2.
Any address within the bank can be used.
80h
WA
1
D0h
Program/
Verify
(3)
3.
The Program/Verify phase can be executed any number of times as long as the data is to be programmed to the same
block.
32
WA
1
PD
1
WA
1
PD
2
WA
1
PD
3
WA
1
PD
31
WA
1
PD
32
Exit
1
NOT
BA
1(4)
4.
WA
1
is the Start Address, NOT BA
1
= Not Block Address of WA
1
.
X
Code
Address (h)
Data (h)
Manufacturer Code
Bank Address + 00
0020
Device Code
Top
Bank Address + 01
88C6h (M58LT128GST)
Bottom
Bank Address + 01
88C7h (M58LT128GSB)
Die Revision Code
Block Address + 03
DRC
(1)
1.
CR = Configuration Register, DRC = Die Revision Code.
Configuration Register
Bank Address + 05
CR
(1)
Protection
Register PR0
ST Factory Default
Bank Address + 80
bit 0 = ‘0’
OTP Area Permanently
Locked
bit 1 = ‘0’
Protection Register PR0
Bank Address + 81
Bank Address + 84
Unique Device Number
Bank Address + 85
Bank Address + 88
OTP Area
Protection Register PR1 through PR16 Lock
Bank Address + 89
PRLD
Protection Registers PR1-PR16
Bank Address + 8A
Bank Address + 109
OTP Area
相關(guān)PDF資料
PDF描述
M58LT128GST1ZA5 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GS 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5E 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LT128GST 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5E 制造商:STMicroelectronics 功能描述:
M58LT128GST1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128HSB 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories