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參數(shù)資料
| 型號(hào)： | M58LT128GSB1ZA5F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 27/98頁 |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GSB1ZA5F |
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M58LT128GST, M58LT128GSB
4 Command Interface
27/98
The Read Electronic Signature command is required to read the updated contents of the
Configuration Register.
Table 5.
Standard Commands
Commands
C
Bus Operations
(1)
1.
X = Don't Care, WA=Word Address in targeted bank, RD=Read Data, SRD=Status Register Data, ESD=Electronic
Signature Data, QD=Query Data, BA=Block Address, BKA= Bank Address, PD=Program Data, PRA = Protection Register
Address, PRD = Protection Register Data, CRD=Configuration Register Data.
1st Cycle
2nd Cycle
Op.
Add
Data
Op.
Add
Data
Read Array
1+
Write
BKA
FFh
Read
WA
RD
Read Status Register
1+
Write
X
70h
Read
BKA
(2)
2.
Must be same bank as in the first cycle. The signature addresses are listed in
Table 7
SRD
Read Electronic Signature
1+
Write
X
90h
Read
BKA
(2)
ESD
Read CFI Query
1+
Write
BKA
98h
Read
BKA
(2)
QD
Clear Status Register
1
Write
BKA
50h
Block Erase
2
Write
BKA or
BA
(3)
3.
Any address within the bank can be used.
20h
Write
BA
D0h
Program
2
Write
BKA or
WA
(3)
40h or 10h
Write
WA
PD
Buffer Program
n+4
Write
BA
E8h
Write
BA
n
Write
PA
1
PD
1
Write
PA
2
PD
2
Write
PA
n+1(4)
4.
n+1 is the number of Words to be programmed.
PD
n+1(4)
Write
X
D0h
Program/Erase Suspend
1
Write
X
B0h
Protection Register Program
2
Write
PRA
C0h
Write
PRA
PRD
Program/Erase Resume
1
Write
X
D0h
Set Configuration Register
2
Write
CRD
60h
Write
CRD
03h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GST1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GS | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GST | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
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