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參數(shù)資料
| 型號： | M58LT128GSB1ZA5F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 24/98頁 |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GSB1ZA5F |
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4 Command Interface
M58LT128GST, M58LT128GSB
24/98
4.9.2
Program and Verify phase
The Program and Verify Phase requires 32 cycles to program the 32 Words to the Write Buffer.
The data is stored sequentially, starting at the first address of the Write Buffer, until the Write
Buffer is full (32 Words). To program less than 32 Words, the remaining Words should be
programmed with FFFFh.
Three successive steps are required to issue and execute the Program and Verify Phase of the
command.
1.
Use one Bus Write operation to latch the Start Address and the first Word to be
programmed. The Status Register Bank Write Status bit SR0 should be read to check that
the P/E.C. is ready for the next Word.
2.
Each subsequent Word to be programmed is latched with a new Bus Write operation. The
address must remain the Start Address as the P/E.C. increments the address location.If
any address that is not in the same block as the Start Address is given, the Program and
Verify Phase terminates. Status Register bit SR0 should be read between each Bus Write
cycle to check that the P/E.C. is ready for the next Word.
3.
Once the Write Buffer is full, the data is programmed sequentially to the memory array.
After the program operation the device automatically verifies the data and reprograms if
necessary.
The Program and Verify phase can be repeated, without re-issuing the command, to
program additional 32 Word locations as long as the address remains in the same block.
4.
Finally, after all Words, or the entire block have been programmed, write one Bus Write
operation to any address outside the block containing the Start Address, to terminate
Program and Verify Phase.
Status Register bit SR0 must be checked to determine whether the program operation is
finished. The Status Register may be checked for errors at any time but it must be checked after
the entire block has been programmed.
4.9.3
Exit phase
Status Register P/E.C. bit SR7 set to ‘1’ indicates that the device has exited the Buffer
Enhanced Factory Program operation and returned to Read Status Register mode. A full Status
Register check should be done to ensure that the block has been successfully programmed.
See the section on the Status Register for more details.
For optimum performance the Buffer Enhanced Factory Program command should be limited to
a maximum of 100 program/erase cycles per block. If this limit is exceeded the internal
algorithm will continue to work properly but some degradation in performance is possible.
Typical program times are given in
Table 16
See
Appendix C
,
Figure 25: Buffer Enhanced Factory Program Flowchart and Pseudo Code
,
for a suggested flowchart on using the Buffer Enhanced Factory Program command.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GST1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GS | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GST | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
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