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參數(shù)資料
| 型號： | M58LT128GSB1ZA5F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 22/98頁 |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GSB1ZA5F |
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4 Command Interface
M58LT128GST, M58LT128GSB
22/98
See
Appendix C
,
Figure 19: Program Flowchart and Pseudo Code
, for the flowchart for using
the Program command.
4.8
Buffer Program command
The Buffer Program Command makes use of the device’s 32-Word Write Buffer to speed up
programming. Up to 32 Words can be loaded into the Write Buffer. The Buffer Program
command dramatically reduces in-system programming time compared to the standard non-
buffered Program command.
Four successive steps are required to issue the Buffer Program command.
1.
The first Bus Write cycle sets up the Buffer Program command. The setup code can be
addressed to any location within the targeted block.
After the first Bus Write cycle, read operations in the bank will output the contents of the
Status Register. Status Register bit SR7 should be read to check that the buffer is
available (SR7 = 1). If the buffer is not available (SR7 = 0), re-issue the Buffer Program
command to update the Status Register contents.
2.
The second Bus Write cycle sets up the number of Words to be programmed. Value n is
written to the same block address, where n+1 is the number of Words to be programmed.
3.
Use n+1 Bus Write cycles to load the address and data for each Word into the Write
Buffer. Addresses must lie within the range from the start address to the start address + n.
Optimum performance is obtained when the start address corresponds to a 32 Word
boundary. If the start address is not aligned to a 32 word boundary, the total programming
time is doubled
4.
The final Bus Write cycle confirms the Buffer Program command and starts the program
operation.
All the addresses used in the Buffer Program operation must lie within the same block.
Invalid address combinations or failing to follow the correct sequence of Bus Write cycles will
set an error in the Status Register and abort the operation without affecting the data in the
memory array.
If the Status Register bits SR4 and SR5 are set to '1', the Buffer Program Command is not
accepted. Clear the Status Register before re-issuing the command.
If the block being programmed is protected an error will be set in the Status Register and the
operation will abort without affecting the data in the memory array.
During Buffer Program operations the bank being programmed will only accept the Read Array,
Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase
Suspend command, all other commands will be ignored.
Refer to Dual Operations section for detailed information about simultaneous operations
allowed in banks not being programmed.
See
Appendix C
,
Figure 20: Buffer Program Flowchart and Pseudo Code
, for a suggested
flowchart on using the Buffer Program command.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GST1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GS | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GST | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128HSB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories |
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