參數(shù)資料
型號(hào)： M58LT128GSB1ZA5F
廠商： 意法半導(dǎo)體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁(yè)數(shù)： 19/98頁(yè)
文件大?。?/td> 693K
代理商： M58LT128GSB1ZA5F
M58LT128GST, M58LT128GSB
4 Command Interface
19/98
4.1
Read Array command
The Read Array command returns the addressed bank to Read Array mode.
One Bus Write cycle is required to issue the Read Array command. Once a bank is in Read
Array mode, subsequent read operations will output the data from the memory array.
A Read Array command can be issued to any banks while programming or erasing in another
bank.
If the Read Array command is issued to a bank currently executing a program or erase
operation, the bank will return to Read Array mode but the program or erase operation will
continue, however the data output from the bank is not guaranteed until the program or erase
operation has finished. The read modes of other banks are not affected.
4.2
Read Status Register command
The device contains a Status Register that is used to monitor program or erase operations.
The Read Status Register command is used to read the contents of the Status Register for the
addressed bank.
One Bus Write cycle is required to issue the Read Status Register command. Once a bank is in
Read Status Register mode, subsequent read operations will output the contents of the Status
Register.
The Status Register data is latched on the falling edge of the Chip Enable or Output Enable
signals. Either Chip Enable or Output Enable must be toggled to update the Status Register
data
The Read Status Register command can be issued at any time, even during program or erase
operations. The Read Status Register command will only change the read mode of the
addressed bank. The read modes of other banks are not affected. Only Asynchronous Read
and Single Synchronous Read operations should be used to read the Status Register. A Read
Array command is required to return the bank to Read Array mode.
See
Table 9
for the description of the Status Register Bits.
4.3
Read Electronic Signature command
The Read Electronic Signature command is used to read the Manufacturer and Device Codes,
the Protection Status of the addressed bank, the Configuration Register and the Protection
Register.
One Bus Write cycle is required to issue the Read Electronic Signature command. Once a bank
is in Read Electronic Signature mode, subsequent read operations in the same bank will output
the Manufacturer Code, the Device Code, the Protection Status of the addressed bank, or the
Configuration Register (see
Table 7
).
The Read Electronic Signature command can be issued at any time, even during program or
erase operations, except during Protection Register Program operations. Dual operations
between the Parameter bank and the Electronic Signature location are not allowed (see
Table 15: Dual Operation Limitations
for details).
If a Read Electronic Signature command is issued to a bank that is executing a program or
erase operation the bank will go into Read Electronic Signature mode. Subsequent Bus Read
相關(guān)PDF資料
PDF描述
M58LT128GST1ZA5 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GS 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5E 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LT128GST 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5E 制造商:STMicroelectronics 功能描述:
M58LT128GST1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128HSB 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
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