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參數(shù)資料
| 型號： | M58LT128GSB1ZA5E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 97/98頁 |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GSB1ZA5E |
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M58LT128GST, M58LT128GSB
14 Revision history
97/98
14
Revision history
Table 50.
Document Revision History
Date
Version
Revision Details
16-Nov-2004
0.1
First Issue.
10-Dec-2004
0.2
Asynchronous Page Read mode added in
Summary description
,
Section 3: Bus
operations
.
Figure 10: Asynchronous Page Read AC Waveforms
updated and
Table 22: Asynchronous Read AC Characteristics
for t
AVQV1
.
17-Jan-2004
0.3
WP and R pins removed from
Figure 1: Logic Diagram
.
WP removed from
Figure 15: Write AC Waveforms, Write Enable Controlled
and
Figure 16: Write AC Waveforms, Chip Enable Controlled
.
20-Jun-2005
0.4
80ns speed class chagned into 85ns.
DU pins changed into NC in
Figure 2: TBGA64 Connections (Top view through
package)
.
t
WHQV
removed from
Figure 15
,
Figure 16
.
Table 22
,
Table 23
and
Table 26
updated.
Table 24
updated; t
WHQV
removed and t
AVWH
, t
ELQV
, t
ELKV
, t
GHWL
, t
WHAV
, and
t
WHAX
timings added.
Table 25
updated, t
WHQV
removed, and t
AVEH
, t
EHAX
, t
EHGL
, t
ELKV
, and t
GHEL
added.
21-Jun-2005
0.5
t
GHTZ
added in
Table 22: Asynchronous Read AC Characteristics
and
Table 23:
Synchronous Read AC Characteristics
.
29-Sep-2005
1.0
Burst frequency chagned from 54 to 52MHz.
85ns speed class removed.
t
AVQV1
changed to 25ns.
V
IO
maximum value updated in
Table 17: Absolute Maximum Ratings
.
t
AVLH
and t
LLLH
updated in
Table 22: Asynchronous Read AC Characteristics
.
t
AVKH
, t
ELKH
and t
LLKH
updated in
Table 23: Synchronous Read AC Characteristics
.
t
AVLH
, t
LLLH
and t
ELLH
updated in
Table 24: Write AC Characteristics, Write Enable
Controlled
and
Table 25: Write AC Characteristics, Chip Enable Controlled
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GSB1ZA5F | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GS | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GSB1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
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