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參數(shù)資料
| 型號： | M58LT128GSB1ZA5E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 26/98頁 |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GSB1ZA5E |
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4 Command Interface
M58LT128GST, M58LT128GSB
26/98
If a Program command is issued during a Block Erase Suspend, then the erase cannot be
resumed until the program operation has completed.
See
Appendix C
,
Figure 21: Program Suspend & Resume Flowchart and Pseudo Code
, and
Figure 23: Erase Suspend & Resume Flowchart and Pseudo Code
, for flowcharts for using the
Program/Erase Resume command.
4.11.1 Protection Register Program
command
The Protection Register Program command is used to program the user One-Time-
Programmable (OTP) segments of the Protection Register and the two Protection Register
Locks.
The device features 16 OTP segments of 128 bits and one OTP segment of 64 bits, as shown
in
Figure 4: Protection Register Map
. The segments are programmed one Word at a time.
When shipped all bits in the segment are set to ‘1’. The user can only program the bits to ‘0’.
Two Bus Write cycles are required to issue the Protection Register Program command.
1.
The first bus cycle sets up the Protection
2.
Register Program command.
3.
The second latches the address and data to be programmed to the Protection Register
and starts the Program/Erase Controller.
Read operations to the bank being programmed output the Status Register content after the
program operation has started.
Attempting to program a previously protected Protection Register will result in a Status Register
error.
The Protection Register Program cannot be suspended. Dual operations between the
Parameter Bank and the Protection Register memory space are not allowed (see
Table 15:
Dual Operation Limitations
for details).
The two Protection Register Locks are used to protect the OTP segments from further
modification. The protection of the OTP segments is not reversible. Refer to
Figure 4:
Protection Register Map
, and
Table 8: Protection Register Lock Bits
, for details on the Lock bits.
See
Appendix C
,
Figure 24: Protection Register Program Flowchart and Pseudo Code
, for a
flowchart for using the Protection Register Program command.
4.12 Set Configuration Register command
The Set Configuration Register command is used to write a new value to the Configuration
Register.
Two Bus Write cycles are required to issue the Set Configuration Register command.
1.
The first cycle sets up the Set Configuration Register command and the address
corresponding to the Configuration Register content.
2.
The second cycle writes the Configuration Register data and the confirm command.
The Configuration Register data must be written as an address during the bus write cycles, that
is DQ0 = CR0, DQ1 = CR1, …, DQ15 = CR15. Addresses A0-A22 are ignored.
Read operations output the array content after the Set Configuration Register command is
issued.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LT128GSB1ZA5F | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GS | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GSB1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
| M58LT128GST1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
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