- 您現(xiàn)在的位置：買賣IC網 > PDF目錄359080 > M58LT128GSB1ZA5 (意法半導體) 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories PDF資料下載
參數(shù)資料
| 型號： | M58LT128GSB1ZA5 |
| 廠商： | 意法半導體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 47/98頁 |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GSB1ZA5 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁當前第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁
M58LT128GST, M58LT128GSB
9 Program and Erase times and Endurance cycles
47/98
9
Program and Erase times and Endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are shown in
Table 16
Exact erase times may change depending on the memory array condition. The best
case is when all the bits in the block are at ‘0’ (pre-programmed). The worst case is when all the
bits in the block are at ‘1’ (not preprogrammed). Usually, the system overhead is negligible with
respect to the erase time. In the M58LT128GST and M58LT128GSB the maximum number of
Program/Erase cycles depends on the V
PP
voltage supply used.
Table 16.
Program/Erase Times and Endurance Cycles
Parameter
Condition
(1)(2)
Min
Typ
Typical
after
100kW/E
Cycles
Max
Unit
V
P
D
Erase
Parameter Block (16 KWord)
0.4
1
2.5
s
Main Block (64
KWord)
Preprogrammed
1
3
4
s
Not Preprogrammed
1.2
4
s
Program
(3)
SIngle Cell
Word Program
30
60
μs
Buffer Program
30
60
μs
Single Word
Word Program
90
180
μs
Buffer Program
90
180
μs
Buffer (32 Words) (Buffer Program)
440
880
μs
Main Block (64 KWord)
880
ms
Suspend Latency
Program
20
25
μs
Erase
20
25
μs
Program/Erase
Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
相關PDF資料 |
PDF描述 |
|---|---|
| M58LT128GS | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5F | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LV064A150ZA1T | 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GSB1ZA5E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5E | 制造商:STMicroelectronics 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。