參數(shù)資料
型號(hào)： M58LT128GSB1ZA5
廠商： 意法半導(dǎo)體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁(yè)數(shù)： 23/98頁(yè)
文件大?。?/td> 693K
代理商： M58LT128GSB1ZA5
M58LT128GST, M58LT128GSB
4 Command Interface
23/98
4.9
Buffer Enhanced Factory Program command
The Buffer Enhanced Factory Program command has been specially developed to speed up
programming in manufacturing environments where the programming time is critical.
It is used to program one or more Write Buffer(s) of 32 Words to a block. Once the device
enters Buffer Enhanced Factory Program mode, the Write Buffer can be reloaded any number
of times as long as the address remains within the same block. Only one block can be
programmed at a time.
The use of the Buffer Enhanced Factory Program command requires certain operating
conditions:
The targeted block must be unprotected. if it is protected, the user must return the device
to read mode.
V
PP
must be set to V
PPH
.
V
DD
must be within operating range.
Ambient temperature T
A
must be 30°C ± 10°C.
The start address must be aligned with the start of a 32 Word buffer boundary.
The address must remain the Start Address throughout programming.
●
●
●
●
●
●
Dual operations are not supported during the Buffer Enhanced Factory Program operation and
the command cannot be suspended.
The Buffer Enhanced Factory Program Command consists of three phases: the Setup Phase,
the Program and Verify Phase, and the Exit Phase, See
Appendix C
,
Figure 25: Buffer
Enhanced Factory Program Flowchart and Pseudo Code
, for a suggested flowchart on using
the Buffer Program command and to
Table 6: Factory Program Command
for details on the
Buffer Enhanced Factory Program command.
4.9.1
Setup phase
The Buffer Enhanced Factory Program command requires two Bus Write cycles to initiate the
command.
1.
The first Bus Write cycle sets up the Buffer Enhanced Factory Program command.
2.
The second Bus Write cycle confirms the command.
After the confirm command is issued, read operations output the contents of the Status
Register. The read Status Register command must not be issued as it will be interpreted as
data to program.
The Status Register P/E.C. Bit SR7 should be read to check that the P/E.C. is ready to proceed
to the next phase.
If an error is detected, SR4 goes high (set to ‘1’) and the Buffer Enhanced Factory Program
operation is terminated. See Status Register section for details on the error.
相關(guān)PDF資料
PDF描述
M58LT128GS 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5E 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5F 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LV064A150ZA1T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LT128GSB1ZA5E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5E 制造商:STMicroelectronics 功能描述:
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