參數(shù)資料
型號： M58LT128GS
廠商： 意法半導(dǎo)體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁數(shù)： 93/98頁
文件大?。?/td> 693K
代理商： M58LT128GS
M58LT128GST, M58LT128GSB
13 Part Numbering
93/98
Table 48.
Command Interface States - Lock Table, Next State
1.
The output state shows the type of data that appears at the outputs if the bank address is the same as the command
address. A bank can be placed in Read Array, Read Status Register, Read Electronic Signature or Read CFI mode,
depending on the command issued. Each bank remains in its last output state until a new command is issued to that bank.
The next state does not depend on the bank output state.
2.
CI = Command Interface, CR = Configuration Register, BEFP = Buffer Enhanced Factory Program, P/E. C. = Program/
Erase Controller.
3.
At Power-Up, all banks are in Read Array mode. Issuing a Read Array command to a busy bank, results in undetermined
data output.
4.
The two cycle command should be issued to the same bank address.
5.
If the P/E.C. is active, both cycles are ignored.
Current CI State
Command Input
(1)(2)
Lock/CR Setup(60h)
(2)
Set CR Confirm
(03h)
Block Address (WA0)
(XXXXh)
(3)
Illegal Command
(4)
WSM Operation
Completed
Ready
Lock/CR Setup
Ready
N/A
Lock/CR Setup
Ready (Lock error)
Ready
Ready (Lock error)
N/A
Program
Setup
Program Busy
N/A
Busy
Program Busy
Ready
Suspend
Program Suspend
N/A
Buffer
Program
Setup
Buffer Program Load 1 (give word count load (N-1)
N/A
Buffer Load
1
Buffer Program Load 2
(5)
Exit
see note
(5)
N/A
Buffer Load
2
Buffer Program Confirm when count =0; Else Buffer Program Load 2 (note: Buffer Program will fail at this point if
any block address is different from the first address)
N/A
Confirm
Ready (error)
N/A
Busy
Buffer Program Busy
Ready
Suspend
Buffer Program Suspend
N/A
Erase
Setup
Ready (error)
N/A
Busy
Erase Busy
Ready
Suspend
Lock/CR Setup in Erase
Suspend
Erase Suspend
N/A
Program in
Erase
Suspend
Setup
Program Busy in Erase Suspend
N/A
Busy
Program Busy in Erase Suspend
Erase Suspend
Suspend
Program Suspend in Erase Suspend
N/A
Buffer
Program in
Erase
Suspend
Setup
Buffer Program Load 1 in Erase Suspend (give word count load (N-1))
Buffer Load
1
Buffer Program Load 2 in Erase Suspend
(6)
Exit
see note
(6)
Buffer Load
2
Buffer Program Confirm in Erase Suspend when count =0; Else Buffer Program Load 2 in Erase Suspend (note:
Buffer Program will fail at this point if any block address is different from the first address)
Confirm
Ready (error)
Busy
Buffer Program Busy in Erase Suspend
Suspend
Buffer Program Suspend in Erase Suspend
相關(guān)PDF資料
PDF描述
M58LT128GST1ZA5E 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
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M58LT128GST 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LT128GSB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
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