參數(shù)資料
型號(hào): M58LT128GS
廠商: 意法半導(dǎo)體
英文描述: 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述: 128Mbit(8兆x16插槽,多銀行,多層次,多突發(fā))1.8V電源安全閃存
文件頁(yè)數(shù): 82/98頁(yè)
文件大小: 693K
代理商: M58LT128GS
13 Part Numbering
M58LT128GST, M58LT128GSB
82/98
1.
2.
The variable P is a pointer which is defined at CFI offset 015h.
Bank Regions. There are two Bank Regions, see
Table 30
to
Table 32
for the M58LT128GST and
Table 33
to
Table 35
for
the M58LT128GSB.
(P+44)h = 14Eh
64h
Bank Region 2 (Erase Block Type 2)
Minimum block erase cycles × 1000
(P+45)h = 14Fh
00h
(P+46)h = 150h
02h
Bank Region 2 (Erase Block Type 2): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
(P+47)h = 151h
03h
Bank Region 2 (Erase Block Type 2): Page mode and
Synchronous mode capabilities (defined in
Table 42
)
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+48)h = 152h
(P+48)h = 152h
Feature Space definitions
(P+49)h = 153h
(P+43)h = 153h
Reserved
Flash memory (top)
Flash memory (bottom)
Description
Offset
Data
Offset
Data
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M58LT128GSB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
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M58LT128GSB1ZA5E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
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