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參數(shù)資料
| 型號： | M58LT128GS |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 8/98頁 |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GS |
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1 Summary description
M58LT128GST, M58LT128GSB
8/98
1
Summary description
The M58LT128GST and M58LT128GSB are 128 Mbit (8 Mbit x16) non-volatile Secure Flash
memories.
The devices may be erased electrically at block level and programmed in-system on a Word-by-
Word basis using a 1.7 to 2.0V V
DD
supply for the circuitry and a 2.7 to 3.6V V
DDQ
supply for
the Input/Output pins. An optional 9V V
PP
power supply is provided to speed up factory
programming.
The devices feature an asymmetrical block architecture and are based on a multi-level cell
technology. The memory array is organized as 131 blocks, and is divided into 8 Mbit banks.
There are 15 banks each containing 8 main blocks of 64 KWords, and one parameter bank
containing 4 parameter blocks of 16 KWords and 7 main blocks of 64 KWords.
The Multiple Bank Architecture allows Dual Operations, while programming or erasing in one
bank, read operations are possible in other banks. Only one bank at a time is allowed to be in
program or erase mode. It is possible to perform burst reads that cross bank boundaries. The
bank architecture is summarized in
Table 2
, and the memory maps are shown in
Figure 3
. The
Parameter Blocks are located at the top of the memory address space for the M58LT128GST,
and at the bottom for the M58LT128GSB.
Each block can be erased separately. Erase can be suspended, in order to perform a program
or read operation in any other block, and then resumed. Program can be suspended to read
data at any memory location except for the one being programmed, and then resumed. Each
block can be programmed and erased over 100,000 cycles using the supply voltage V
DD
. There
is a Buffer Enhanced Factory programming command available to speed up programming.
Program and erase commands are written to the Command Interface of the memory. An
internal Program/Erase Controller takes care of the timings necessary for program and erase
operations. The end of a program or erase operation can be detected and any error conditions
identified in the Status Register. The command set required to control the memory is consistent
with JEDEC standards.
The device supports Synchronous Burst Read and Asynchronous Read and Page Read from
all blocks of the memory array; at power-up the device is configured for Asynchronous Read. In
Synchronous Burst Read mode, data is output on each clock cycle at frequencies of up to
52MHz. The Synchronous Burst Read operation can be suspended and resumed.
The device features an Automatic Standby mode. When the bus is inactive during
Asynchronous Read operations, the device automatically switches to the Automatic Standby
mode. In this condition the power consumption is reduced to the standby value and the outputs
are still driven.
The M58LT128GST and M58LT128GSB are equipped with several features to increase data
protection:
Hardware Protection: all blocks are protected from program and erase operations when
the V
PP
≤
V
PPLK
.
A full set of Software Security Features described in a dedicated Application Note. Please
contact STMicroelectronics for further details.
64-bit Unique Device Identifier
2112 bits of User-Programmable OTP memory
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GSB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
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