參數(shù)資料
型號： M58LT128GS
廠商： 意法半導(dǎo)體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁數(shù)： 74/98頁
文件大?。?/td> 693K
代理商： M58LT128GS
13 Part Numbering
M58LT128GST, M58LT128GSB
74/98
Table 37.
CFI Query Identification String
Table 38.
CFI Query System Interface Information
Offset
Sub-section Name
Description
Value
000h
0020h
Manufacturer Code
ST
001h
88C6h
88C7h
Device Code
M58LT128GST
M58LT128GSB
Top
Bottom
002h
reserved
Reserved
003h
DRC
Die Revision Code
004h-00Fh
reserved
Reserved
010h
0051h
Query Unique ASCII String "QRY"
"Q"
011h
0052h
"R"
012h
0059h
"Y"
013h
0001h
Primary Algorithm Command Set and Control Interface ID code 16
bit ID code defining a specific algorithm
014h
0000h
015h
offset = P = 000Ah
Address for Primary Algorithm extended Query table (see
Table 40
)
p = 10Ah
016h
0001h
017h
0000h
Alternate Vendor Command Set and Control Interface ID Code
second vendor - specified algorithm supported
NA
018h
0000h
019h
value = A = 0000h
Address for Alternate Algorithm extended Query table
NA
01Ah
0000h
Offset
Data
Description
Value
01Bh
0017h
V
DD
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
1.7V
01Ch
0020h
V
DD
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
2V
01Dh
0085h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
8.5V
01Eh
0095h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
9.5V
01Fh
0008h
Typical time-out per single byte/word program = 2
n
μs
256μs
020h
0009h
Typical time-out for Buffer Program = 2
n
μs
512μs
021h
000Ah
Typical time-out per individual block erase = 2
n
ms
1s
022h
0000h
Typical time-out for full chip erase = 2
n
ms
NA
相關(guān)PDF資料
PDF描述
M58LT128GST1ZA5E 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LT128GSB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
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