參數(shù)資料
型號： M58LT128GS
廠商： 意法半導體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁數(shù)： 45/98頁
文件大小： 693K
代理商： M58LT128GS
M58LT128GST, M58LT128GSB
8 Dual Operations and Multiple Bank architecture
45/98
8
Dual Operations and Multiple Bank architecture
The Multiple Bank Architecture of the M58LT128GST and M58LT128GSB gives greater
flexibility for software developers to split the code and data spaces within the memory array.
The Dual Operations feature simplifies the software management of the device by allowing
code to be executed from one bank while another bank is being programmed or erased.
The Dual Operations feature means that while programming or erasing in one bank, read
operations are possible in another bank with zero latency (only one bank at a time is allowed to
be in program or erase mode).
If a read operation is required in a bank, which is programming or erasing, the program or erase
operation can be suspended.
Also if the suspended operation was erase then a program command can be issued to another
block, so the device can have one block in Erase Suspend mode, one programming and other
banks in read mode.
Bus Read operations are allowed in another bank between setup and confirm cycles of
program or erase operations.
By using a combination of these features, read operations are possible at any moment in the
M58LT128GST and M58LT128GSB devices.
Dual operations between the Parameter Bank and either of the CFI, or the Electronic Signature
memory space are not allowed.
Table 15
shows which dual operations are allowed or not
between the CFI, the Electronic Signature locations and the memory array.
Table 13
and
Table 14
show the dual operations possible in other banks and in the same bank.
Table 13.
Dual Operations Allowed In Other Banks
Status of bank
Commands allowed in another bank
Read
Array
Read
Status
Register
Read
CFI
Query
Read
Electronic
Signature
Program,
Buffer Program
Block
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
Yes
Yes
Yes
Yes
–
–
Yes
–
Erasing
Yes
Yes
Yes
Yes
–
–
Yes
–
Program Suspended
Yes
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
Yes
Yes
Yes
Yes
–
–
Yes
相關(guān)PDF資料
PDF描述
M58LT128GST1ZA5E 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST1ZA5F 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LV064A150ZA1T 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LT128GSB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
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